Abstract:Abstract Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A III B V , A II B VI , and potential alternatives to formerly mentioned—“ third wave ” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A III B V APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A III B V APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 5 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

Recent progress of avalanche photodiodes in high-resolution X-rays and Gamma-rays detection

Disorder-Induced First Order Transition and Curie Temperature Lowering in Ferromagnatic Manganites

Development of a 32-channel ASIC for an X-ray APD Detector onboard the ISS

Recent progress of innovative infrared avalanche photodetectors

Sub-nanosecond time resolution detector based on APD for Synchrotron Radiation ultrafast experiments

APDs as Single-Photon Detectors for Visible and Near-Infrared Wavelenghts down to Hz Rates

Infrared avalanche photodiodes from bulk to 2D materials

Avalanche Photo-Detection for High Data Rate Applications

Local Avalanche Photodetectors Driven by Lightning-rod Effect and Surface Plasmon Excitations

Progress towards a megapixel linear-mode avalanche photodiode array for ultra-low background shortwave infrared astronomy

Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 μm Wavelength Detection

A New Compact Position-Sensitive PMT for Scintillation Detectors

First tests of a 1 megapixel near-infrared avalanche photodiode array for ultra-low background space astronomy

Development of a New Γ-Ray Detector for PEM Applications

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Repeated radiation damage and thermal annealing of avalanche photodiodes

Advances in the Large Area Picosecond Photo-Detector (LAPPD): 8" x 8" MCP-PMT with Capacitively Coupled Readout

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Development of an optical photon-counting imager with a monolithic Geiger APD array