Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

M. Yamanouchi,D. Chiba,F. Matsukura,T. Dietl,H. Ohno

DOI: https://doi.org/10.1103/PhysRevLett.96.096601

2006-01-23

Abstract:Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to manipulate magnetization by electrical means without an external magnetic field, especially to study the current - induced magnetic domain wall (DW) motion. Specifically, the author focuses on the speed and mechanism of magnetic domain wall motion under different current density and temperature conditions in the ferromagnetic semiconductor (Ga,Mn)As.

### Research Background and Problems

1. **Understanding of Physical Phenomena**: Current - induced magnetization reversal involves complex physical phenomena that are not fully understood by current theories.
2. **Importance of Technical Applications**: This current - induced magnetization reversal is of great technological significance for high - density magnetic memories because it can reduce the power consumption required for magnetization reversal.
3. **Combination of Experiment and Theory**: Although there have been many studies on current - induced magnetization reversal in metal systems, related research in the ferromagnetic semiconductor (Ga,Mn)As still needs further exploration.

### Specific Problems

- **Mechanism of Current - Induced Magnetic Domain Wall Motion**: The author hopes to experimentally verify the specific mechanism of current - induced magnetic domain wall motion, especially the Slonczewski - like mechanism and the torque caused by spin - flip in the domain wall region.
- **Magnetic Domain Wall Creeping at Low Currents**: The author also hopes to understand whether there is a creeping phenomenon of magnetic domain wall under low - current conditions and explore the physical mechanism behind it.
- **Magnetic Domain Wall Speeds at Different Temperatures and Current Densities**: Study the speed range of magnetic domain wall motion at different temperatures and current densities to verify the accuracy of existing theoretical models.

### Experimental Results and Conclusions

Through experiments, the author has observed the phenomenon that the magnetic domain wall motion speed spans five orders of magnitude and has found that:
- At high current densities, the magnetic domain wall motion is mainly driven by the Slonczewski mechanism.
- At low current densities, there is a magnetic domain wall creeping phenomenon, which may be caused by critical magnetization fluctuations.
- The experimental results are consistent with the theoretical model, especially in describing the critical current density and the magnetic domain wall speed.

In summary, this paper aims to experimentally verify the specific mechanism of current - induced magnetic domain wall motion and provide theoretical support for future research and technological applications.