Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

M. Yamanouchi,D. Chiba,F. Matsukura,T. Dietl,H. Ohno
DOI: https://doi.org/10.1103/PhysRevLett.96.096601
2006-01-23
Abstract:Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.
Materials Science
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