Abstract:We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.

Line Widths of Single-Electron Tunneling Oscillations: Experiment and Numerical Simulations

Direct observation of time correlated single-electron tunneling

Electron Interferometry in the Quantum Hall Regime: Aharonov-Bohm Effect of Interacting Electrons

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Charge fluctuations in single-electron tunneling oscillations

Power Spectra and Auto Correlation Analysis of Hyperfine-Induced Long Period Oscillations in the Tunneling Current of Coupled Quantum Dots

Incoherent dynamics of vibrating single-molecule transistors

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian

Electron counting in quantum dots

A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

Stability of long-sustained oscillations induced by electron tunneling

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

An ultra-narrow line width levitated nano-oscillator for testing dissipative wavefunction collapse

Fingerprinting the Electronic Wavefunctions of Ultra-Small Conductors

Statistics of electron tunneling in normal tunnel junctions

Physical Origins of Fine Structure in the Resonant Tunneling Through Laterally Confined 1D-0D-1d Structures

Tracking the Electronic Oscillation in Molecule with Tunneling Microscopy

Current fluctuations in a single tunnel junction

Modelling background charge rearrangements near single-electron transistors as a Poisson process

Tunneling broadening of vibrational sidebands in molecular transistors