Abstract:Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mode. Application of positive gate voltage results in accumulation of electrons in the “n-type” BixSe1-x layer resulting in an increase of conductivity. In order to explain the drain current-gate voltage behavior, we used a simple polynomial model to describe the change in the device characteristics due to charge traps. The model was fitted with our experimental results. We further analyzed the gate leakage current, which showed a good match with trap-assisted tunneling (TAT) process that was used to derive trap parameters. The obtained trap parameters show the presence of ultra-deep charge traps contributing to the hysteretic behavior.Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mo...

Evidence of Water-related Discrete Trap State Formation in Pentacene Single Crystal Field-Effect Transistors

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress

(Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs

Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Transient Hole Trapping in Individual Gesi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy

Electron Transport in Solution-Grown TIPS-pentacene Single Crystals: Effects of Gate Dielectrics and Polar Impurities

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs