Superconductor-semiconductor magnetic microswitch

C. Castellana,F. Giazotto,M. Governale,F. Taddei,F. Beltram

DOI: https://doi.org/10.1063/1.2172018

2006-02-03

Abstract:A hybrid superconductor--two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by a ferromagnetic strip placed on top of the structure. Device switching is predicted with fields up to some mT and working frequencies of several GHz, making it promising for applications ranging from microswitches and storage cells to magnetic field discriminators.

Mesoscale and Nanoscale Physics,Superconductivity

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a micro - switching device based on a superconductor - semiconductor hybrid structure. Its working principle is to control Andreev reflection through the magnetic barrier generated at the superconductor - semiconductor interface. Specifically, this device utilizes the magnetic field generated by ferromagnetic strips to suppress Andreev reflection, thereby regulating the subgap conductance of the superconductor - two - dimensional electron gas (2DEG) junction. This regulation mechanism enables the device to perform rapid switching in the microwave band and GHz frequency range and has broad application prospects, such as micro - switches, memory cells, and magnetic field resolvers.

### Problem Analysis

1. **Background and Motivation**
- Superconductor - normal metal (NS) junctions exhibit unique low - voltage transmission characteristics due to the existence of the superconducting energy gap, and these characteristics can be used for various electronic applications.
- Andreev reflection is a scattering process that occurs at the NS interface, in which an electron is reflected as a hole at voltages below the superconducting energy gap and a Cooper pair is injected into the superconducting state.
- Controlling Andreev reflection can effectively regulate subgap conductance, which is of great significance for nanoelectronics applications.

2. **Specific Problems**
- How to control Andreev reflection at the superconductor - semiconductor interface through an external magnetic field?
- What is the working principle of the device? How to achieve high - speed and high - sensitivity switching?
- What are the potential applications of this device?

### Solution

The authors propose a superconductor - 2DEG hybrid microstructure. The core idea is to use the magnetic barrier generated by ferromagnetic strips to regulate Andreev reflection. The specific steps are as follows:

1. **Device Structure**
- The device consists of a superconductor - 2DEG ballistic junction. The superconducting interface is located at \(x = 0\), and the transmission is along the \(x\)-axis direction.
- A ferromagnetic strip with a width of \(d\) and a thickness of \(h\) is deposited above the junction, and the magnetization intensity of the strip is \(M\).

2. **Magnetic Field Influence**
- The \(z\)-component of the magnetic field generated by the ferromagnetic strip forms a double magnetic barrier in the 2DEG plane, and its intensity can be adjusted by rotating the magnetization direction.
- The \(z\)-component of the magnetic field \(B_z(x)\) can be expressed by the following formula:
\[
B_z(x)=\frac{\mu_0}{2\pi}M_xh\left(\frac{K(x + d/2,z_0)-K(x - d/2,z_0)}{d}\right)\theta(x)
\]
where \(K(x,z)=-\frac{zd}{x^2 + z^2}\), \(\theta(x)\) is the step function, and \(\mu_0\) is the vacuum permeability.

3. **Physical Mechanism**
- When the energy of quasiparticles is less than the superconducting energy gap, the transmission is mediated by Andreev reflection.
- The presence of the magnetic barrier can suppress Andreev reflection, thereby significantly reducing the subgap conductance.
- By changing the magnetization angle \(\phi\), the magnetic field intensity can be regulated, thereby achieving effective control of the subgap conductance.

4. **Application Prospects**
- This device can be used as a high - speed micro - switch, a magnetic field resolver, and a non - volatile memory cell.
- By selecting appropriate materials and parameters, stable operation can be achieved at room temperature, which has broad practical application potential.

### Summary

The superconductor - 2DEG hybrid microstructure proposed in this paper provides a novel method to control Andreev reflection at the superconductor - semiconductor interface, thereby achieving efficient and rapid switching in the microwave band and GHz frequency range. This device not only has theoretical research value but also provides new possibilities for practical applications.