Ferromagnetism and Curie temperature of Vanadium-doped Nitrides

V. A. Dinh,H. Katayama-Yoshida

DOI: https://doi.org/10.48550/arXiv.cond-mat/0504355

2005-04-14

Abstract:Electronic structures, exchange interaction mechanism between magnetic ions and Curie temperature of Vanadium - doped Nitrides (AlN, GaN, and InN) are studied within KKR-LSDA-CPA. It is found that the ferromagnetic super-exchange interaction mechanism is dominant at low concentrations of Vanadium, but the anti-ferromagnetic super-exchange interaction appears and reduces the stabilization of ferromagnetism at sufficiently high concentrations (x > 0.10), especially for Vanadium-doped AlN and Vanadium- doped GaN. The estimation of the Curie temperature within the mean field approximation shows the Curie temperature of Vanadium-doped Nitrides exceeding the room temperature with a few constituents of Vanadium.

Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: **How to achieve ferromagnetic diluted magnetic semiconductors (DMS) with a Curie temperature (\(T_c\)) higher than room temperature through vanadium (V) - doped nitrides (AlN, GaN and InN), thus making it possible for the application of spintronic devices.**

Specifically, the main research problems include:

1. **Ferromagnetism and exchange mechanisms**:
- Explore the dominant role of the ferromagnetic super - exchange interaction mechanism in vanadium - doped nitrides at low vanadium concentrations.
- Study the emergence of the anti - ferromagnetic super - exchange interaction (\(x>0.10\)) at high vanadium concentrations and its suppression of ferromagnetism.

2. **Estimation of Curie temperature**:
- Use the mean - field approximation (MFA) to estimate the Curie temperature at different vanadium concentrations and explore its relationship with room temperature.
- Determine whether the Curie temperature of these materials can exceed room temperature through a small amount of vanadium doping, so as to be suitable for practical applications.

3. **Material design and potential applications**:
- Based on first - principle calculations, evaluate the feasibility of vanadium - doped nitrides as diluted magnetic semiconductors.
- Explore the potential applications of these materials in spintronic devices, especially considering their wide - band - gap energy and high optical efficiency.

### Formula summary

- **Curie temperature estimation formula** (based on the mean - field approximation of the Heisenberg model):
\[
k_BT_c=\frac{2\Delta E}{3x}
\]
where \(k_B\) is the Boltzmann constant, \(\Delta E = E_{\text{sg}}-E_{\text{ferro}}\) is the energy difference between the spin - glass state and the ferromagnetic state, and \(x\) is the concentration of substituted vanadium atoms.

Through these studies, the authors hope to reveal the laws of ferromagnetism and Curie temperature in vanadium - doped nitrides, providing theoretical basis and technical support for the further development of high - temperature ferromagnetic diluted magnetic semiconductor materials.