Characterization of the Fibonacci Cobweb Poset as oDAG

Ewa Krot

DOI: https://doi.org/10.48550/arXiv.math/0503295

2005-03-15

Abstract:The characterization of fibonacci cobweb poset as d.a.g. and o.d.a.g. is given. The dim 2 poset such that its hasse diagram coincide with digraf of fibonacci cobweb poset is constructed.

Combinatorics,Discrete Mathematics

What problem does this paper attempt to address?

Ultra-low voltage resonant tunnelling diode electroabsorption modulator

J.M.L. Figueiredo,C. N. Ironside,C. R. Stanley

DOI: https://doi.org/10.48550/arXiv.physics/0503098

2005-03-12

Abstract:Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non-linearity and negative differential resistance in the current-voltage (I-V) characteristic of the waveguide. This makes the electric field distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley there is an increase of the electric field across the depleted core. The electric field enhancement in the core-depleted layer causes the Franz-Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption effect. High frequency ac signals as low as 100 mV can induce electric field high speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key difference between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric field across the core depleted region; the RTDEAM has in essence an integrated electronic amplifier and therefore requires considerably less switching power.

Optics,Instrumentation and Detectors
Quantum-Coherence-Assisted Tunable On- and Off-Resonance Tunneling Through a Quantum-Dot-Molecule Dielectric Film

Jian Qi Shen,Rui Xi Zeng

DOI: https://doi.org/10.7566/jpsj.86.024401

2016-01-01

Journal of the Physical Society of Japan

Abstract:Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on-and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates.
Frequency‐sensitive Switching Control Effect Induced by Two‐photon Resonance in an EIT‐based Layered Medium

Teh-Chau Liau,Jian Qi Shen,Yao-Huang Kao,Tzong-Jer Yang

DOI: https://doi.org/10.1002/andp.201200229

2013-01-01

Annalen der Physik

Abstract:The optical response of an atomic vapor can be coherently manipulated by tunable quantum interference occurring in atomic transition processes. A periodic layered medium whose unit cells consist of a dielectric and an EIT (electromagnetically induced transparency) atomic vapor is designed for light propagation manipulation. Such an EIT‐based periodic layered medium exhibits a flexible frequency‐sensitive optical response, where a very small change in probe frequency can lead to a drastic variation of reflectance and transmittance. As the destructive quantum interference relevant to two‐photon resonance arises in EIT atoms interacting with both control and probe fields, the controllable optical processes that depend sensitively on the external control field will take place in this EIT‐based periodic layered medium. Such a frequency‐sensitive and field‐controlled optical behavior of reflection and transmission in the EIT photonic crystal can be applicable to designs of new devices such as photonic switches, photonic logic gates and photonic transistors, where one laser field can be controlled by the other one, and would have potential applications in the areas of integrated optical circuits and other related techniques (e.g., all‐optical instrumentations).
A metamaterial modulator based on electrically controllable electromagnetically induced transparency

Yuancheng Fan,Tong Qiao,Fuli Zhang,Quanhong Fu,Jiajia Dong,Botao Kong

DOI: https://doi.org/10.48550/arXiv.1605.02201

2016-05-07

Optics

Abstract:Electromagnetically induced transparency (EIT) is a promising technology for the enhancement of light-matter interactions, and recent demonstrations of the quantum EIT realized in artificial micro-structured medium have remarkably reduced the extreme requirement for experimental observation of EIT spectrum. In this paper, we propose to electrically control the EIT spectrum in a metamaterial for an electromagnetic modulator. A diode acting as a tunable resistor is loaded in the gap of two paired wires to inductively tune the magnetic resonance, which induces remarkable modulation on the EIT spectrum through the metamaterial sample. The experimental measurements confirmed that the prediction of electromagnetic modulation in three narrow bands on the EIT spectrum, and a modulation contrast of up to 31 dB was achieved on the transmission through the metamaterial. Our results may facilitate the study on active/dynamical technology in translational metamaterials, which connect extraordinary manipulations on the flow of light in metamaterials, e.g., the exotic EIT, and practical applications in industry.
A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

Xueliang Shi,Shilie Zheng,Hao Chi,Xiaofeng Jin,Xianmin Zhang

DOI: https://doi.org/10.1088/2040-8978/13/12/125001

IF: 2.1

2011-01-01

Journal of Optics

Abstract:A wideband electro-optic (EO) modulator based on long range surface plasmon resonances is proposed and numerically demonstrated. The modulator model consists of a prism-dielectric-metal-EO polymer-metal structure, using attenuated total internal reflection to excite long range surface plasmon resonances and a conductor-backed coplanar waveguide to distribute radiofrequency (RF) electrical signals. The parameters of the structure are optimized and the results show that the different frequency signals with voltages of 1.36 V at 6 GHz, 2.03 V at 20 GHz and 2.71 V at 60 GHz are enough to achieve a modulation index of 15.2%. The maximal modulation index can reach 76% ranging from DC to 60 GHz by increasing the input RF voltage, and the insertion loss can be decreased to 4.2 dB by adjusting the operating bias. High modulation efficiency, wide operating bandwidth and low insertion loss are realized simultaneously in this design.
Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Sen Zhang,Yimin Xia,Jianjun Meng,Jiasheng Zhao,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2019.2950608

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We report a widely tunable V-cavity laser monolithically integrated with an electro-absorption modulator (EAM). The device shows a 41-nm wavelength tunability covering 51 channels at 100 GHz spacing on the ITU grid, with a side-mode suppression ratio (SMSR) higher than 47 dB. Error-free transmission over 50 km standard single-mode fiber at 10 Gb/s is demonstrated at all wavelengths over the tuning range. The integrated EAM exhibits a dynamic extinction ratio higher than 12.5 dB. The bit-error-rate measurements show a power penalty less than 3 dB for 50-km transmission. The results demonstrate that this ultra-compact and regrowth-free electro-absorption modulated tunable laser can be a cost-effective transmitter solution for DWDM metropolitan and access networks.
Monolayer WS2 based electro-absorption modulator

Luting Huang,Guofang Fan,Yanan Zhu,Muguang Wang,Xiaoyu Cai,Jiasi Wei,Hongyu Li,Yuan Li

DOI: https://doi.org/10.1016/j.optmat.2021.110851

IF: 3.754

2021-03-01

Optical Materials

Abstract:Monolayer WS2 electro-absorption modulator (EAM) on GaN waveguide is investigated. By covering monolayer WS2 on top of the optical waveguide and applying different voltages to change the refractive index of WS2, a strong interaction between monolayer WS2 and light is obtained, which leads to a significant change of the imaginary part of effective mode index (EMI) in the waveguide. A systematic and detailed discussion has been presented to describe and design the EAM. Results show that the EAM can achieve 153 GHz 3-dB modulation bandwidth, around 70% modulation depth and lower insertion loss with 10 μm-long active region. These will be helpful for the study of two-dimensional material electro-optic modulator.

materials science, multidisciplinary,optics
Realizing the electromagnetically induced transparency (EIT)-like transmission with a single hole-ring resonator

Gaoyang Ye,Ran Hao,Xiaobin Lin,Erping Li

DOI: https://doi.org/10.1016/j.optcom.2019.04.015

IF: 2.4

2019-01-01

Optics Communications

Abstract:Electromagnetically induced transparency like effect, which can form a sharp transmission window within a broad spectrum, has been widely studied due to its potential in many optical devices. In this work, unlike traditional couple-ring resonator structure, we propose a new scheme to achieve electromagnetically induced transparency using only one hole-ring resonator. Thus, the proposed scheme can greatly miniaturize the device. At the wavelength of about 1550 nm, the structure can form multiple transparency windows and can behave as a refractive index sensor with high resolution, the figure of merit can reach larger than 530. The proposed scheme can pave the way for many practical applications such as optical sensors, optical switches and slow light devices.
The Material Structure Research of the GaAs-based Resonant Tunneling Diode

WANG Jie,ZHANG Binzhen,LIU Jun,TANG Jianjun,TAN Zhenxin,JIA Xiaojuan,GAO Jie

DOI: https://doi.org/10.3969/j.issn.1000-3819.2011.02.008

2011-01-01

Abstract:RTDs of three different material structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy.We mainly proceed contrast design aim at well structure.Then tested the I-V character of the designed structure.In the test result,the PVCR of the device is up to 6,VP is reduced to 0.41 V.And we tested one of the designed structure's I-V curve under four different emitter area of sensitive cell,finally analyzed and summarized the relationship between the well structure of the device and emitter area of sensitive cell with the DC character of the device,which provided a reference for the better performance of the RTD structure design.
A Room-Temperature Ferroelectric Resonant Tunneling Diode

Zhijun Ma,Qi Zhang,Lingling Tao,Yihao Wang,Daniel Sando,Jinling Zhou,Yizhong Guo,Michael Lord,Peng Zhou,Yongqi Ruan,Zhiwei Wang,Alex Hamilton,Alexei Gruverman,Evgeny Y. Tsymbal,Tianjin Zhang,Nagarajan Valanoor

DOI: https://doi.org/10.1002/adma.202205359

IF: 29.4

2022-01-01

Advanced Materials

Abstract:Resonant tunneling is a quantum-mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum-well (QW) structure. A ferroelectric resonant tunneling diode (RTD) exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, the discovery of robust room-temperature ferroelectric-modulated resonant tunneling and negative differential resistance (NDR) behaviors in all-perovskite-oxide BaTiO3/SrRuO3/BaTiO3 QW structures is reported. The resonant current amplitude and voltage are tunable by the switchable polarization of the BaTiO3 ferroelectric with the NDR ratio modulated by approximate to 3 orders of magnitude and an OFF/ON resistance ratio exceeding a factor of 2 x 10(4). The observed NDR effect is explained an energy bandgap between Ru-t(2g) and Ru-e(g) orbitals driven by electron-electron correlations, as follows from density functional theory calculations. This study paves the way for ferroelectric-based quantum-tunneling devices in future oxide electronics.
Up to 50 Gb/s modulation of an EAM integrated widely tunable DBR laser

Yunlong Liu,Lichen Zhang,Xiaobo La,Xuyuan Zhu,Lingjuan Zhao,Wei Wang,Song Liang

DOI: https://doi.org/10.1364/OE.408722

2021-02-01

Abstract:An electro-absorption modulator (EAM) integrated widely tunable distributed Bragg reflector (DBR) laser working at 1.5 µm is reported. By utilizing the RF resonance between the bonding wire and the EAM, a 28 GHz modulation bandwidth is obtained. The device is modulated with up to 50 Gb/s NRZ data. At 28 Gb/s, the power penalty to obtain a 10-10 bit error rate (BER) after a 5 Km standard single mode fiber transmission is less than 0.7 dB. Because the DBR material has a long bandgap wavelength, the wavelength tuning range of the laser is larger than 12 nm. The DBR laser is a promising low cost tunable light source for future high capacity wavelength division multiplexing (WDM) optical communication systems.
Study Of The Total Internal Reflection Switch

Hui Yu,Wei Qi,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Minghua Wang,Jianyi Yang

DOI: https://doi.org/10.1117/12.811137

2009-01-01

Abstract:The optical waveguide switch utilizing the principle of total internal reflection (TIR) is a promising structure since its merits such as compact size, digital response characteristic, insensitivity to wavelength and polarization, and so on. In this paper the TIR switch is studied both in theory and in experiment. At first, we give a comprehensive analysis about reflection mechanism in the TIR switch from the following three issues: the grazing incidence of a narrow beam in the free space, the beam reflection in a bounded space, and the beam expansion induced by the reflection in a two-dimensional gradient field of the refractive index decrease. Then based on the analytical works, we successfully fabricate practical TIR switches by utilizing the thermo-optical effect of polymer and the carrier injection effect of GaAs (both the current injection and the photon injection manners are employed). The testing results show that: the extinction ratio of the thermo-optical TIR switch exceeds 35 dB at an power consumption of 80 mW; for the carrier injection TIR switch utilizing the current injection manner, its operation speed is faster than 20 ns and its operation current is about 70 mA.
A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and Its Circuit Level Design

Qi Wang,Yang Li,Si Dan Du

DOI: https://doi.org/10.4028/www.scientific.net/amm.346.35

2013-01-01

Applied Mechanics and Materials

Abstract:RTD (resonant tunneling diode) is a nonlinear device in nm scale level and operates at ps time level which is promising to be used into integrated circuits in the coming years. J.N.Schulmans physical model has beenproven to be suitable to emulate the device accurately. In this paper, a novelRTD based on new material structure is proposed which could reach a relative high PVCR (peak-valley-current-ratio). Then NFP (Nonlinear Fitting based on Physical model) method which is suitable to calculate the parameters for Schulmans physical model more quickly is proposed. At the end of paper the SPICE model of the proposed RTD is proven that it could emulate the RTD device, and shows its application ability in high frequency oscillation circuit.
An 80Gb/s Ge Waveguide Electro-Absorption Modulator

yufei liu,Jialiang Sun,Ruogu Song,xinyu li,Jinyu Wang,Shuxiao Wang,yijia yu,Wencheng Yue,Yan Cai,Mingbin Yu

DOI: https://doi.org/10.1364/oe.462890

IF: 3.8

2022-01-01

Optics Express

Abstract:We demonstrate a Ge electro-absorption modulator (EAM) in L band with a 3 dB electro-optical bandwidth beyond 67 GHz at −3 V bias voltage. The Eye diagram measurement shows a data rate of over 80 Gbps for non-return-to-zero on-off keying (NRZ-OOK) modulation at a voltage swing of 2.3 Vpp and the wavelength of 1605 nm. Through the comparison of multi-device results, it is proved that the introduction of the annealing process after CMP can increase the mean static extinction ratio of the EAM from 7.27 dB to 11.83 dB, which confirms the manufacturability of the device. The dynamic power consumption of the device is 6.348 fJ/bit. The performance of our device is comprehensive. The Ge EAM device also has excellent performance as a photodetector (PD) in the C and L communication bands. The responsivity of the device is 1.04 A/W at the wavelength of 1610 nm, resulting in ∼0.87 mW of static power consumption at −3 V bias voltage under 0.28 mW of optical input and the 3 dB opto-electric bandwidth of the devices are beyond 43 GHz at −3 V bias.
Electrically switchable behavior in coupled EIT-like meta-molecule and Fabry-Pérot cavity

Lei Yang,Lei Gao,Rui Jiang,Wenzhe He,Jun Wang,Qian Wu,Yong Sun,Quanying Wu,Yongqiang Chen

DOI: https://doi.org/10.1088/1402-4896/ad8192

2024-10-01

Physica Scripta

Abstract:In this paper, we propose a microstrip Fabry-Pérot (FP) cavity embedded with an active electromagnetically-induced-transparency-like (EIT-like) meta-molecule to investigate the electrically switchable behavior. The phenomenon of EIT is achieved by coupling a "bright" comb-line resonator with a "dark" split-ring resonator. The FP cavity is fabricated by etching two narrow slots on a microstrip line. With two different resonance mechanisms working together, the proposed composite EIT-cavity design is shown to exhibit the enhanced EIT-like transmission characteristics, accompanied by two sharp Fano-type line-shapes. By incorporating PIN diodes into the composite EIT-cavity structure, we can dramatically modulate the transmission spectrum via external DC voltage. In particular, we show the multi-band unity modulations through biasing the proposed active samples. Moreover, the slow light on-to-off switching processes are also obtained with modifying the state of PIN diode from dielectric to conductive. Our results may open important opportunities for fabricating dynamic functional photonic devices in the future.

physics, multidisciplinary
Modulation transfer protocol for Rydberg RF receivers

Duc-Anh Trinh,Adwaith K. V.,Mickael Branco,Aliénor Rouxel,Sacha Welinski,Perrine Berger,Fabienne Goldfarb,Fabien Bretenaker

2024-09-13

Abstract:We propose and demonstrate a modulation transfer protocol to increase the detection sensitivity of a Rydberg RF receiver to fields out of resonance from the transition between Rydberg levels. This protocol is based on a phase modulation of the control field used to create the Electromagnetically Induced Transparency (EIT) signal. The nonlinear wave-mixing of the multi-component coupling laser and the probe laser transfers the modulation to the probe laser, which is used for RF-field detection. The measurements compare well with semi-classical simulations of atom-light interaction and show an improvement in the RF bandwidth of the sensor and an improved sensitivity of the response to weak fields.

Quantum Physics,Atomic Physics
High repetition rate optical switch using an electroabsorption modulator in TOAD configuration

Li Huo,Yanfu Yang,Caiyun Lou,Yizhi Gao

DOI: https://doi.org/10.1016/j.optlastec.2006.06.009

IF: 4.939

2007-01-01

Optics & Laser Technology

Abstract:A novel optical switch featured with high repetition rate, short switching window width, and high contrast ratio is proposed and demonstrated for the first time by placing an electroabsorption modulator (EAM) in a terahertz optical asymmetric demultiplexer (TOAD) configuration. The feasibility and main characteristics of the switch are investigated by numerical simulations and experiments. With this EAM-based TOAD, an error-free return-to-zero signal wavelength conversion with 0.62dB power penalty at 20Gbit/s is demonstrated.
Experimental study of NRZ format wavelength conversion using electroabsorption modulator

Yanfu Yang,Caiyun Lou,Jiajun Wang,Li Huo,Yizhi Gao

DOI: https://doi.org/10.1016/j.optcom.2005.11.034

IF: 2.4

2006-01-01

Optics Communications

Abstract:In this paper, NRZ format wavelength conversion using cross absorption modulation (XAM) in InGaAsP MQW electroabsorption modulator (EAM) is investigated experimentally in detail for the first time, to the best of our knowledge. The influence of two key operating parameters, input signal power and bias voltage of EAM, on wavelength conversion performance is studied. Experimental results indicate that there exists optimal bias voltage for fixed input signal power and that there exists also optimal input signal power for fixed bias voltage and the lowest power penalty of 0.9dB is obtained by optimizing these two parameters. The physical explanations are given for these results based on operating characteristic of EAM device. Finally, the probe light wavelength dependence of wavelength conversion is studied for span of 1530–1560nm.
Integratable electro-optic modulator based on a polymer-embedded silicon racetrack resonator with high electro-optic wavelength tuning

Tao Ma,Yongsheng Tian,Linxing Su,Huan Wang,Heng Liu,Fang Wang

DOI: https://doi.org/10.1364/AO.467799

2022-09-01

Abstract:Electro-optic (EO) modulators based on polymer-embedded silicon racetrack resonators (EOM-PSRR) are investigated. To obtain the single-mode propagation condition, the mode and transmission characteristics of the polymer-embedded silicon waveguide are simulated by the finite element method (FEM). By adding a static bias voltage, the EO modulation performances of EOM-PSRR embedded with lithium niobate (LiNbO3), EO polymer (AJ309), and hybrid EO polymer/TiO2 material (HEOT) are studied. The results show that the EOM-PSRR embedded with LiNbO3 achieves a high modulation depth (MD) of ∼27.6dB with a low EO wavelength tuning (λEO) of 10 pm/V. However, the EOM-PSRR embedded with HEOT has a high λEO of 100 pm/V but a low MD of ∼6.2dB with an extinction ratio of ∼5.2dB. The EOM-PSRR has potential application prospects in optical communication, optical signal processing, and optical network links. It can be produced as an optical frequency comb generator in a dense wavelength division multiplexing system, an EO frequency shifter for laser beams, an optical soliton former, and a photon time-delay device in a phased array radar.
80Gb/s NRZ Ge Waveguide Electro-Absorption Modulator.

Yufei Liu,Jialinag Sun,Ruogu Song,Xinyu Li,Jinyu Wang,Shuxiao Wang,Yijia Yu,Wencheng Yue,Yan Cai,Mingbin Yu

DOI: https://doi.org/10.1364/oe.462890

IF: 3.8

2022-01-01

Optics Express

Abstract:We demonstrate a Ge electro-absorption modulator (EAM) in L band with a 3 dB electro-optical bandwidth beyond 67 GHz at -3 V bias voltage. The Eye diagram measurement shows a data rate of over 80 Gbps for non-return-to-zero on-off keying (NRZ-OOK) modulation at a voltage swing of 2.3V(pp) and the wavelength of 1605 nm. Through the comparison of multi-device results, it is proved that the introduction of the annealing process after CMP can increase the mean static extinction ratio of the EAM from 7.27 dB to 11.83 dB, which confirms the manufacturability of the device. The dynamic power consumption of the device is 6.348 fJ/bit. The performance of our device is comprehensive. The Ge EAM device also has excellent performance as a photodetector (PD) in the C and L communication bands. The responsivity of the device is 1.04 A/W at the wavelength of 1610 nm, resulting in similar to 0.87 mW of static power consumption at -3V bias voltage under 0.28 mW of optical input and the 3 dB opto-electric bandwidth of the devices are beyond 43 GHz at -3V bias. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Characterization of the Fibonacci Cobweb Poset as oDAG

Ultra-low voltage resonant tunnelling diode electroabsorption modulator

Quantum-Coherence-Assisted Tunable On- and Off-Resonance Tunneling Through a Quantum-Dot-Molecule Dielectric Film

Frequency‐sensitive Switching Control Effect Induced by Two‐photon Resonance in an EIT‐based Layered Medium

A metamaterial modulator based on electrically controllable electromagnetically induced transparency

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Monolayer WS2 based electro-absorption modulator

Realizing the electromagnetically induced transparency (EIT)-like transmission with a single hole-ring resonator

The Material Structure Research of the GaAs-based Resonant Tunneling Diode

A Room-Temperature Ferroelectric Resonant Tunneling Diode

Up to 50 Gb/s modulation of an EAM integrated widely tunable DBR laser

Study Of The Total Internal Reflection Switch

A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and Its Circuit Level Design

An 80Gb/s Ge Waveguide Electro-Absorption Modulator

Electrically switchable behavior in coupled EIT-like meta-molecule and Fabry-Pérot cavity

Modulation transfer protocol for Rydberg RF receivers

High repetition rate optical switch using an electroabsorption modulator in TOAD configuration

Experimental study of NRZ format wavelength conversion using electroabsorption modulator

Integratable electro-optic modulator based on a polymer-embedded silicon racetrack resonator with high electro-optic wavelength tuning

80Gb/s NRZ Ge Waveguide Electro-Absorption Modulator.