Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Bright dipolar excitons in twisted black phosphorus homostructures

Bright dipolar excitons in twisted black phosphorus homostructures

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Bright excitons in black phosphorus

Infrared optoelectronics in twisted black phosphorus

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Twist angle and electric gating controllable electronic structure of two-dimensional stacked BP homo-structure

Highly anisotropic and robust excitons in monolayer black phosphorus

Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus

Quasiparticle Energies, Excitons, and Optical Spectra of Few-Layer Black Phosphorus

Hunting for Monolayer Black Phosphorus with Photoluminescence Microscopy

Ultrafast Carrier Dynamics and Efficient Triplet Generation in Black Phosphorus Quantum Dots

Giant moire trapping of excitons in twisted hBN

Pseudo-heterostructure and condensation of 1D moiré excitons in twisted phosphorene bilayers

Bright and Dark Quadrupolar Excitons in the WSe_{2}/MoSe_{2}/WSe_{2} Heterotrilayer.

Signatures of sub-band excitons in few-layer black phosphorus

Quadrupolar–dipolar excitonic transition in a tunnel-coupled van der Waals heterotrilayer

The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction