Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt
Yixin Wang,Xin Rong,Sergey Ivanov,Valentin Jmerik,Zhaoying Chen,Hui Wang,Tao Wang,Ping Wang,Peng Jin,Yanan Chen,Vladimir Kozlovsky,Dmitry Sviridov,Michail Zverev,Elena Zhdanova,Nikita Gamov,Valentin Studenov,Hideto Miyake,Hongwei Li,Shiping Guo,Xuelin Yang,Fujun Xu,Tongjun Yu,Zhixin Qin,Weikun Ge,Bo Shen,Xinqiang Wang
DOI: https://doi.org/10.1002/adom.201801763
IF: 9
2019-03-26
Advanced Optical Materials
Abstract:Abstract High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources, operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high‐quality thermally annealed AlN templates by metal‐organic chemical vapor deposition. Owing to the reduced dislocation density, large electron–hole overlap, and efficient carrier injection by e‐beam, the DUV light sources demonstrate high output powers of 24.8, 122.5, and 178.8 mW at central wavelengths of 232, 244, and 267 nm, respectively. Further growth optimization and employing an e‐gun with increased beam current lead to a record output power of ≈2.2 W at emission wavelength of ≈260 nm, the key wavelength for water sterilization. This work manifests the practical levels of high‐output‐power DUV light sources operated by using e‐beam pumping method.
materials science, multidisciplinary,optics