Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions
Han-Chun Wu,Cormac Ó Coileáin,Mourad Abid,Ozhet Mauit,Askar Syrlybekov,Abbas Khalid,Hongjun Xu,Riley Gatensby,Jing Jing Wang,Huajun Liu,Li Yang,Georg S Duesberg,Hong-Zhou Zhang,Mohamed Abid,Igor V Shvets
DOI: https://doi.org/10.1038/srep15984
2015-11-02
Abstract:Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe3O4/MgO/Fe3O4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe3O4 at the interface between Fe3O4 layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS2) is a transition metal dichalcogenide (TMD) semiconductor with distinctive electronic, optical, and catalytic properties. Here, we show based on the first principle calculations that Fe3O4 keeps a nearly fully spin polarized electron band at the interface between MoS2 and Fe3O4. We also present the first attempt to fabricate the Fe3O4/MoS2/Fe3O4 MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS2 can be a good barrier material for Fe3O4 based MTJs. Our calculations also indicate that junctions incorporating monolayer or bilayer MoS2 are metallic.