Abstract:Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.

Tunable terahertz emission from difference-frequency in biased superlattices

Generation and controllable switching of superradiant and subradiant states in a 10-qubit superconducting circuit

Controllable Switching between Superradiant and Subradiant States in a 10-qubit Superconducting Circuit.

Exciton Absorption in Semiconductor Superlattices in A Strong Longitudinal Thz Field

Strong terahertz emission from superlattices via Zener tunneling

Bloch Oscillation under a Bichromatic Laser: Dynamical Delocalization and Localization, Persistent Terahertz Emission, and Harmonics Generation

Bloch gain in dc-ac-driven semiconductor superlattices in the absence of electric domains

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

The non-linear terahertz response of hot electrons in low-dimensional semiconductor superlattices: Suppression of the polar-optical phonon scattering

Harmonic Generation in Biased Semiconductor Superlattices

Generation of Coherent Terahertz Radiation with Multifrequency Modes in A Fibonacci Optical Superlattice

Difference‐Frequency Generation with and Without Quantum Interference in Superconducting Circuits

Simultaneous High-Efficiency and Equal-Level Second- and Third-Harmonic Generation Achieved by Controllable Linear Gratings in A Quasiperiodic Optical Superlattice

Free-Electron-Driven Multi-Frequency Terahertz Radiation on a Super-Grating Structure.

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Broadband Terahertz Generation Via the Interface Inverse Rashba-Edelstein Effect.

Electronic Control of Extraordinary Terahertz Transmission Through Subwavelength Metal Hole Arrays

Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors

Improvement of Optical Confinement for Terahertz Vertical-Cavity Surface-Emitting Laser with Square-Lattice Photonic Crystal Structure

Terahertz semiconductor-heterostructure laser

Quasi-Cw Ultraviolet Generation in a Dual-periodic LiTaO3 Superlattice by Frequency Tripling