Electronic Control of Extraordinary Terahertz Transmission Through Subwavelength Metal Hole Arrays

Hou-Tong Chen,Hong Lu,Abul K. Azad,Richard D. Averitt,Arthur C. Gossard,Stuart A. Trugman,John F. O'Hara,Antoinette J. Taylor
DOI: https://doi.org/10.1364/oe.16.007641
IF: 3.8
2008-01-01
Optics Express
Abstract:We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.
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