Abstract:Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits to perform complex error-corrected calculations. Silicon metal-oxide-semiconductor based quantum dots present a promising pathway for realizing practical quantum computers. To improve certain qubit properties, it is a common strategy to incorporate multiple electrons in the same dot in order to form qubits in higher confined orbital states. Theoretical modelling is an essential part of understanding the quantum behaviour of these electrons, providing a basis for validating the physical working of device models as well as providing insights into experimental data. Hartree-Fock theory is an imperative tool for the electronic structure modelling of multi-electron quantum dots due to its ability to simulate a large number of electrons with manageable computation load. However, an efficient calculation of the self-consistent field becomes hard because dot formations in silicon are characterized by strong electron-electron interactions and conduction band valleys, besides the relatively high comparative effective mass, which add to create a behaviour dominated by repulsion between electrons rather than a well established shell structure. In this paper, we present a Hartree-Fock-based method that accounts for these complexities for the modelling of silicon quantum dots. With this method, we first establish the significance of including electron-electron interactions and valley degree of freedom and their implications. We then explore a simple case of anisotropic dots and observe the impact of anisotropy on dot formations.

Symmetry Constraints and the Electronic Structures of a Quantum Dot with Thirteen Electrons

Tuning Quantum Dot States with Optical Fields

Symmetry-engineered Nodal Lines and Hourglass Fermions in Patterned Two-Dimensional Electron Gas

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Spectral Properties Of A Double-Quantum-Dot Structure: A Causal Green'S Function Approach

Explicit and Hidden Symmetries in Quantum Dots and Quantum Ladders

Ground-State Properties of an Artificial Molecule: a Simple Model Calculation for the Double Quantum Dot

Quantum Phase Transition and Emergent Symmetry in a Quadruple Quantum Dot System

Electronic Correlations in Multielectron Silicon Quantum Dots

Half-Integer Filling Factor States in Quantum Dots

Fine-structure splitting of exciton states in quantum dot molecules: symmetry and tunnel-coupling effects

Near Homogeneous Variation of Potentials in Large Systems and the Electronic Structure of Molecular Quantum Dots

Electron-Hole Correlations and Optical Excitonic Gaps in Quantum-Dot Quantum Wells: Tight-Binding Approach

Exact Spectra and Spin Oscillations for Two Electrons in Quantum Dots

Exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress.

Modelling of Quantum Dots with the Finite Element Method

Multielectron dots provide faster Rabi oscillations when the core electrons are strongly confined

Fine-structure Splitting of Exciton States in Semiconductor Quantum Dot Molecules

Stationary States of an Electron in a Prolate Spheroidal Quantum Dot

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

DFT and Model Hamiltonian Study of Optoelectronic Properties of Some Low-Symmetry Graphene Quantum Dots