Abstract:We exploit ferromagnetic imprinting to create complex laterally defined regions of nuclear spin polarization in lithographically patterned MnAs/GaAs epilayers grown by molecular beam epitaxy (MBE). A time-resolved Kerr rotation microscope with approximately 1 micron spatial resolution uses electron spin precession to directly image the GaAs nuclear polarization. These measurements indicate that the polarization varies from a maximum under magnetic mesas to zero several microns from the mesa perimeter, resulting in large (10**4 T/m) effective field gradients. The results reveal a flexible scheme for lateral engineering of spin-dependent energy landscapes in the solid state.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to achieve spatially controllable nuclear spin polarization in GaAs (gallium arsenide) through magnetic patterning and study how this polarization affects the dynamic behavior of electron spins. Specifically, the authors explored the following issues: 1. **How to use ferromagnetic imprinting techniques to create complex laterally - defined nuclear spin - polarized regions**: By performing lithographic patterning on MnAs/GaAs heterostructures, study how these patterned ferromagnets imprint complex magnetization patterns onto the nuclear spins in the adjacent GaAs layer. 2. **The relationship between the spatial distribution of nuclear spin polarization and the shape of the patterned ferromagnet**: Use time - resolved Kerr microscopy (TRKM) to directly image the nuclear spin polarization in GaAs with a spatial resolution of about 1 micron, and study whether the nuclear spin polarization can closely follow the shape of the patterned ferromagnet. 3. **The influence of the effective magnetic field gradient**: Measure the effective magnetic field and its gradient caused by nuclear spin polarization, explore the influence of these gradients on the electron Larmor precession frequency and spin - related forces, and their performance at low temperatures. 4. **The role of nuclear spin diffusion and electron spin lifetime**: Study the change of nuclear spin polarization over the transition width Λ, analyze the influence of GaAs layers of different thicknesses on Λ, and explore the role of electron spin lifetime in determining Λ. 5. **The causes of nuclear spin polarization fluctuations**: Observe and analyze the fluctuations of nuclear spin polarization in the lateral position, and explore whether these fluctuations are related to sample inhomogeneity or the properties of the ferromagnetic material itself. Through the research of these issues, the authors aim to develop a flexible and scalable technology for spatially modulating spin - dependent energy landscapes in solid - state systems, which may provide new ideas for the design of new spintronic devices and a powerful tool for spin manipulation on the mesoscopic scale. ### Main Conclusions - Nuclear spin polarization can form complex laterally - defined regions in GaAs, and its shape is closely related to the shape of the patterned ferromagnet. - The nuclear spin polarization transition width Λ increases with the increase of the GaAs layer thickness, indicating that a thicker GaAs layer will lead to a wider polarization transition region. - The effective magnetic field gradient can reach about \(10^4 \, \text{T/m}\), which helps to enhance the local electron Larmor precession frequency and spin - related forces. - The electron spin lifetime may be one of the key factors in determining the nuclear spin polarization transition width Λ, rather than simple electron mobility. - Nuclear spin polarization fluctuations are mainly caused by the inhomogeneity of the ferromagnetic material or the ferromagnetic/GaAs interface, rather than the process of the GaAs layer itself. These findings provide an important basis for further understanding the nuclear spin polarization mechanism and its application in spintronics.

Spatial Imaging of Magnetically Patterned Nuclear Spins in GaAs

Spatial Imaging and Mechanical Control of Spin Coherence in Strained GaAs Epilayers

Completion of Katz-Qin-Ruan's Enumeration of Genus-Two Plane Curves

Experimental Demonstration of Scanned Spin-Precession Microscopy

170 Nanometer Nuclear Magnetic Resonance Imaging using Magnetic Resonance Force Microscopy

Direct imprinting of arbitrary spin textures using programmable structured light in a semiconductor two-dimensional electron gas

Ultrafast Optical Observation of Spin-Pumping Induced Dynamic Exchange Coupling in Ferromagnetic Semiconductor/metal Bilayer.

Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

Imaging non-collinear antiferromagnetic textures via single spin relaxometry

Imaging the magnetic nanowire cross section and magnetic ordering within a suspended 3D artificial spin-ice

Real-space imaging of non-collinear antiferromagnetic order with a single spin magnetometer

Anomalous Nernst effect based near field imaging of magnetic nanostructures

Simultaneous measurements of nuclear spin heat capacity, temperature and relaxation in GaAs microstructures

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

Sensing Noncollinear Magnetism at the Atomic Scale Combining Magnetic Exchange and Spin-Polarized Imaging

Atomic-scale visualization of topological spin textures in the chiral magnet MnGe

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Imprinting spin patterns by local strain control in a van der Waals antiferromagnet

Imaging the Néel vector switching in the monolayer antiferromagnet MnPSe3 with strain-controlled Ising order

Quantification of competing magnetic states and switching pathways in curved nanowires by direct dynamic imaging

Spin Dynamics in Patterned Magnetic Multilayers with Perpendicular Magnetic Anisotropy