Al3+ -doping-induced enhancement of Tb3Ga5O12:Eu3+ orange light-emitting phosphor photoluminescence for white light-emitting diodes

Qingwei Liu,Fanchao Meng,Xiaowei Zhang,Chaoyi Zhang,Xinyu Wang,Lina Liu,Chun Li,Hai Lin,Yanyan Zhou,Fanming Zeng,Zhongmin Su
DOI: https://doi.org/10.1016/j.jlumin.2020.117505
IF: 3.6
2020-10-01
Journal of Luminescence
Abstract:In this study, a series of Al3+ co-doped Tb3Ga5O12:Eu3+ orange light-emitting phosphors was synthesized using a high-temperature solid-state reaction method. At an excitation wavelength of 379 nm, all samples exhibited strong orange light emissions at 592 nm. This could be attributed to the dominance of the 5D0/7F1 transition of Eu3+ ions, indicating that the Eu3+ ions were located at highly symmetrical sites in the host lattice. In order to improve the luminescence performance of Tb3Ga5O12:Eu3+, the effect of Al3+ ion doping on the crystal structure and luminescence properties of Tb3Ga5O12:Eu3+ were studied. It was found that Al3+ doping could significantly improve the emission intensity of Tb3Ga5O12:Eu3+. With an increase in Al3+ doping concentration, the intensity increased to a maximum and then decreased. At x = 0.6 with Tb3Ga5-xAlxO12:Eu3+, the luminescence intensity reached the maximum value, which is 2.07 times of Tb3Ga5O12:Eu3+. In addition, the Tb3Ga4.4Al0·6O12:Eu3+ phosphor demonstrated good thermal stability with activation energy of 0.244 eV, and its quantum efficiency was as high as 95.6%. In summary, an orange light-emitting diode device was manufactured, indicating that Tb3Ga5-xAlxO12:Eu3+ orange light-emitting phosphors have potential applications by combination with near-ultraviolet LED devices.
optics
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