Probing Edge State Conductance in Ultra‐Thin Topological Insulator Films
Arthur Leis,Michael Schleenvoigt,Kristof Moors,Helmut Soltner,Vasily Cherepanov,Peter Schüffelgen,Gregor Mussler,Detlev Grützmacher,Bert Voigtländer,Felix Lüpke,F. Stefan Tautz
DOI: https://doi.org/10.1002/qute.202200043
2022-08-02
Advanced Quantum Technologies
Abstract:Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their 2D interior and 1D spin‐polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as an enhanced local density of states (LDOS). However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, few‐layer films of the 3D topological insulator (BixSb1−x$_{1-x}$)2Te3 are studied, for which a topological transition to a 2D topological QSH insulator phase has been proposed. Indeed, an edge state in the LDOS is observed within the band gap. Yet, in nanoscale transport experiments with a four‐tip STM, two‐quintuple‐layer films do not exhibit a ballistic conductance in the edge channels and thus no QSH edge states. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi‐tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials. In the present work, the conductance of quantum spin Hall edge states is probed using a multi‐tip scanning tunneling microscope as a “multimeter on the nanoscale.” While it is found that in the currently analyzed system no highly conducting edge states are detected, a route how to identify ballistic edge channels, the hallmark property of QSH phase, is demonstrated unequivocally.