Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Lattice-Matched Metal–Semiconductor Heterointerface in Monolayer Cu 2 Te

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Epitaxial growth and air-stability of monolayer Cu<sub>2</sub>Te

Modulation of electronic state in copper-intercalated 1T-TaS 2

A Computational Study of Monolayer Hexagonal WTe2 to Metal Interfaces

Effects of strain and thickness on the mechanical, electronic, and optical properties of Cu 2 Te.

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

Synthesis and Physical Properties of Two-Dimensional Cu 2 Te Nanosheets

Epitaxial Growth of Single‐Phase 1T'‐WSe 2 Monolayer with Assistance of Enhanced Interface Interaction

Designing high-efficiency electrode contacts to two-dimensional semiconductor Cu 2 Se

Observation of an Incommensurate Charge Density Wave in Monolayer TiSe 2 / CuSe / Cu ( 1 1 1 ) Heterostructure

Se-concentration dependent superstructure transformations of CuSe monolayer on Cu(111) substrate

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Nanopore-patterned CuSe drives the realization of PbSe-CuSe lateral heterostructure

Theoretical Analysis of a Two-Dimensional Metallic/Semiconducting Transition-Metal Dichalcogenide NbS2//WSe2 Hybrid Interface

Observation of an Incommensurate Charge Density Wave in Monolayer TiSe2/CuSe/Cu(111) Heterostructure

Energetics and Atomic Structures of Cu2Te Overlayers on CdTe(111)