Homotopy groups of K-contact toric manifold

Eugene Lerman

DOI: https://doi.org/10.48550/arXiv.math/0204064

2002-04-05

Abstract:We compute the first and second homotopy groups of a class of contact toric manifolds in terms of the images of the associated moment map.

Symplectic Geometry,Differential Geometry

What problem does this paper attempt to address?

Nitrogen-Induced Magnetic Transition In Small Chromium Clusters

Q. Wang,Q. Sun,B. K. Rao,P. Jena,Y. Kawazoe

DOI: https://doi.org/10.1063/1.1607958

2003-01-01

Abstract:Using density functional theory with generalized gradient approximation for exchange and correlation, we show that otherwise antiferromagnetically coupled chromium atoms in very small chromium clusters couple ferromagnetically when doped with a nitrogen atom, thus leading to giant magnetic moments. For example, the magnetic moment of Cr2N is found to be 9mu(B) while that of Cr-2 is 0mu(B). Strong bonding between Cr and N atoms brings about this magnetic transition. The Cr atoms nearest neighbor to N couple ferromagnetically with each other and antiferromagnetically with nitrogen. The significance of these results in understanding the ferromagnetic order in Cr-doped GaN is discussed. (C) 2003 American Institute of Physics.
Magnetism in Mn Nanowires and Clusters as δ-doped Layers in Group IV Semiconductors (Si, Ge)

K. R. Simov,P.-A. Glans,C. A. Jenkins,M. Liberati,P. Reinke1

DOI: https://doi.org/10.48550/arXiv.1707.00217

2017-07-02

Abstract:Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a {\delta}-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge capping layer, which conserves the identity of the {\delta}-doped layer. The analysis of the bonding environment with STM is combined with the element-specific detection of the magnetic signature with X-ray magnetic circular dichroism. The largest moment (2.5 {\mu}B/Mn) is measured for Mn-wires, which have ionic bonding character, with an a-Ge overlayer cap, a-Si capping leads to a slightly reduced moment which has its origin in subtle variation of bonding geometry. Our results directly confirm theoretical predictions on magnetism for Mn-adatoms on Si(001). The moment is quenched to 0.5{\mu}B/Mn for {\delta}-doped layers, which are dominated by clusters, and thus develop an antiferromagnetic component from Mn-Mn bonding.

Materials Science
Ferromagnetism in Mn-doped GaN Nanowires.

Q Wang,Q Sun,P Jena

DOI: https://doi.org/10.1103/physrevlett.95.167202

IF: 8.6

2005-01-01

Physical Review Letters

Abstract:Using density functional theory we show that the magnetic coupling of Mn atoms in the nanowires, unlike that in the thin film, is ferromagnetic. This ferromagnetic coupling, brought about due to the confinement of electrons in the radial direction and the curvature of the Mn-doped GaN nanowires' surface, is mediated by N as is evidenced from the overlap between Mn 3d and N 2p states. Calculations of the anisotropic energy further show that the magnetic moment orients preferably along the [1010] direction while the wire axis points along the [0001] direction.
Martensitic transition, ferrimagnetism and Fermi surface nesting in Mn_2NiGa

S. R. Barman,S. Banik,A. K. Shukla,C. Kamal,Aparna Chakrabarti

DOI: https://doi.org/10.48550/arXiv.0707.2133

2007-07-14

Other Condensed Matter

Abstract:The electronic structure of Mn_2NiGa has been studied using density functional theory and photoemission spectroscopy. The lower temperature tetragonal martensitic phase with c/a= 1.25 is more stable compared to the higher temperature austenitic phase. Mn_2NiGa is ferrimagnetic in both phases. The calculated valence band spectrum, the optimized lattice constants and the magnetic moments are in good agreement with experiment. The majority-spin Fermi surface (FS) expands in the martensitic phase, while the minority-spin FS shrinks. FS nesting indicates occurrence of phonon softening and modulation in the martensitic phase.
Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Q. Sun,P. Jena

2007-01-01

Abstract:First principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped Ga1−xMnxN thin films. We show that the ground state of Mn-doped GaN 101̄0 thin film, with Mn replacing the Ga sites, is antiferromagnetic but becomes ferromagnetic when it is codoped with C. The interaction between the Mn spins via the delocalized holes introduced by codoping of C at N sites is responsible for this transition. The overlap between Mn 3d and C 2p in the spin-up band renders half-metallic character to the C codoped Ga,Mn N system. The observed ferromagnetism in Ga,Mn N thin films is believed to be associated with defects or codoping with other elements during the film growth. The present study provides the theoretical understanding for many recent experiments on the Mn-doped GaN system.
Inhomogeneous Magnet NaMnIII[BP2O7(OH)3]: Ferromagnetic Clusters Inserted in a Metamagnetic Matrix

Tao Yang,Yan Zhang,Jianhua Lin

DOI: https://doi.org/10.1002/ejic.200900387

IF: 2.551

2009-01-01

European Journal of Inorganic Chemistry

Abstract:NaMnIII [BP2O7(OH)(3)] (1) has been hydrothermally synthesized and characterized by single-crystal X-ray diffraction. The manganese(III) cations are coordinated in a tetragonal-elongated octahedral environment, indicating the possible large magnetic anisotropy. The MnO6 octahedra are interconnected by BO4/PO4 groups, forming a 3D trichnic net of Mn-III backbone. Detailed dc and ac magnetic measurements have been conducted, and a preliminary H-T phase diagram is deduced accordingly. Compound 1 adopts an unusual magnetic inhomogeneous model, consisting of ferromagnetic clusters and a metamagnetic background: At the paramagnetic temperature region, the Curie-Weiss fit shows that the manganese atoms are all in the high spin state (S = 2), and the predominant interaction is ferromagnetic. An antiferromagnetic ground state forms at approximately 10 K, the isothermal magnetizations between 6.5 and 10 K show the typical metamagnetism. At approximately 6.5 K, a short-range ordering of the ferromagnetic cluster occurs. Below 3.5 K, the ferromagnetic clusters tend to be frozen at low external field, and the inhomogeneous magnetism can be clearly indicated by the isothermal magnetizations below 3 K. This unusual magnetism cannot be understood by the popular mechanism in doped manganese perovskites, which are well known to be magnetically inhomogeneous because of the mixed valence of manganese. In compound 1, one of the possible reasons for this unusual behaviour is the competition between magnetic superexchange interactions and the large magnetic anisotropy of Mn-III. ((C) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)
Structural and paramagnetic properties of dilute Ga1-xMnxN

Wiktor Stefanowicz,Dariusz Sztenkiel,Bogdan Faina,Andreas Grois,Mauro Rovezzi,Thibaut Devillers,Francesco d'Acapito,Andrea Navarro-Quezada,Tian Li,Rafal Jakiela,Maciej Sawicki,Tomasz Dietl,Alberta Bonanni

DOI: https://doi.org/10.1103/PhysRevB.81.235210

2011-07-21

Abstract:Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

Materials Science
First-Principles Study of Electronic and Magnetic Properties of ConMnmand ConVm(m+n≤ 6) Clusters

wu bin pan,Lan-Feng Yuan,Jinlong Yang

DOI: https://doi.org/10.1021/jp804188u

2008-01-01

Abstract:The electronic and magnetic properties of small ConMnm and ConVm (m + n <= 6) clusters are systematically studied using density functional theory. The results show that Co and V atoms prefer to aggregate in Co-Mn and Co-V clusters, respectively. Significant magnetic moment enhancement in Co-Mn clusters with Mn doping and reduction in Co-V clusters with V doping are found, consistent with experiment results for larger clusters [Phys. Rev. Lett. 2007, 98, 113401]. The results are discussed by analyzing the magnetic coupling type and local magnetic moment on each atoms. Density of states and vertical ionization potentials are calculated and show cluster size dependent behavior.
Nitrogen Vacancy Effects on the Ferromagnetism of Mn Doped GaN Films

B. Hu,B. Y. Man,M. Liu,C. Yang,C. S. Chen,X. G. Gao,S. C. Xu,C. C. Wang,Z. C. Sun

DOI: https://doi.org/10.1007/s00339-012-6900-z

2012-01-01

Abstract:The amorphous gallium nitride thin films doped with Mn were deposited by Laser assisted Molecular Beam Epitaxy (LMBE). After annealing at different NH 3 flow rates, the high-quality GaMnN crystalline films with different concentration of nitrogen vacancies ( V N ) were obtained, which were confirmed by the X-ray diffraction spectroscopy and Raman measurements. The magnetic behaviors of these films were also obtained to investigate the effects of nitrogen vacancies. It indicates that V N play a significant role in the origin of ferromagnetism. The stronger room-temperature ferromagnetism is given with the higher V N concentration when it is not beyond a critical concentration. Moreover, from our M ( T ) curves and Raman analysis, the films present high resistivity. The magnetism of films with high resistivity varies with concentration of nitrogen vacancies, which can be explained by the bound magnetic polarons (BMP) theory.
Studies on Structural and Magnetic Properties in Mn-Doped GaN

Cui Xugao,Zhang Rong,Tao Zhikuo,Li Xin,Xiu Xiangqian,Xie Zili

2008-01-01

Abstract:Mn-doped GaN epitaxial films(Ga1-xMnxN)were grown on sapphire [0001] by metal organic chemical vapor deposition(MOCVD).Mn concentration was determined by energy dispersive spectrometry(EDS).For Ga1-xMnxN with x up to 0.027,no secondary phases except for GaN were detected by high resolution X-ray diffractometer(XRD).Raman scattering spectra shows that the longitudinal optical phonon mode A1(LO)of Ga1-xMnxN shifts towards lower frequency with increasing Mn concentration due to substitutional Mn incorporation.Room temperature electron spin resonance(ESR)measurements are performed and highly anisotropic six-fold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions.However,superconductor quantum interference device(SQUID)magnetometry reveals that all homogenous Mn-doped GaN films show paramagnetic-like behaviors.From Brillouin function fit and ESR spectra,it is concluded that Mn ions are present as isolated paramagnetic centers.
Ferromagnetism of MnO anchored on graphene with N dopant

Junchen Gao,Haiyi Zhang,Baorui Xia,Xu Jiang,Daqiang Gao

DOI: https://doi.org/10.1016/j.jmmm.2022.170069

IF: 3.097

2022-12-15

Journal of Magnetism and Magnetic Materials

Abstract:MnO is a well-known antiferromagnetic transition mental oxide with a wide band gap, the lack of intrinsic ferromagnetism limits its applications in spintronics. Hence, in order to expand the application field of MnO and especially explore the existence of ferromagnetism, we experimentally achieve the N-doped MnO anchored graphene. As is expected, the MnO-based samples exhibit obvious intrinsic room temperature ferromagnetism, which is dependent on the N dopant concentration. Further, density functional theory (DFT) results reveal that the spontaneous magnetization comes from the ferromagnetic double-exchange interaction between Mn atoms with the aid of N dopants.

materials science, multidisciplinary,physics, condensed matter
First-principles study of electronic and magnetic properties of Co(n)Mn(m) and Co(n)V(m) (m + n < or = 6) clusters.

Pan Wu,Lan-Feng Yuan,Jinlong Yang

DOI: https://doi.org/10.1021/jp804188u

2008-01-01

Abstract:The electronic and magnetic properties of small Co(n)Mn(m) and Co(n)V(m) (m + n < or = 6) clusters are systematically studied using density functional theory. The results show that Co and V atoms prefer to aggregate in Co-Mn and Co-V clusters, respectively. Significant magnetic moment enhancement in Co-Mn clusters with Mn doping and reduction in Co-V clusters with V doping are found, consistent with experiment results for larger clusters [Phys. Rev. Lett. 2007, 98, 113401]. The results are discussed by analyzing the magnetic coupling type and local magnetic moment on each atoms. Density of states and vertical ionization potentials are calculated and show cluster size dependent behavior.
Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Xugao Cui,ZhiKuo Tao,Rong Zhang,Xuefei Li,Xiangqian Xiu,Zili Xie,Shulin Gu,Ping Han,Yi Shi,Youdou Zheng

DOI: https://doi.org/10.1063/1.2909545

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Mn-doped GaN epitaxial films (Ga1-xMnxN) were grown on sapphire (0001) by metal organic chemical vapor deposition. Mn concentration was determined by energy dispersive spectrometry. For Ga1-xMnxN with x up to 0.027, no secondary phases except for GaN were detected by high resolution x-ray diffractometer. Raman scattering spectra show that the longitudinal optical phonon mode A(1)(LO) of Ga1-xMnxN shifts toward lower frequency with increasing Mn concentration due to substitutional Mn incorporation. Electron spin resonance (ESR) measurements were performed and highly anisotropic sixfold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions. However, magnetometry reveals that all homogenous Ga1-xMnxN show paramagneticlike behaviors. From Brillouin function fit and ESR spectra, it is concluded that Mn ions are present as isolated paramagnetic centers. (c) 2008 American Institute of Physics.
Electronic Structure and Magnetic Properties in Nitrogen-doped from Density Functional Calculations

Wen-Zhi Xiao,Ling-Ling Wang,Liang Xu,Qing Wan,An-Lian Pan

DOI: https://doi.org/10.1016/j.ssc.2010.02.007

IF: 1.934

2010-01-01

Solid State Communications

Abstract:Based on first-principles spin-polarized density functional theory calculations, the electronic and magnetic properties of nitrogen-doped monoclinic beta-phase gallium oxide are investigated. Calculations predict that the spin-polarized state is stable with a magnetic moment of about 1 0 mu(B) per nitrogen-dopant The magnetic moment mainly arises from the p orbital of nitrogen, with a little contribution from the Oxygen atoms surrounding it. Magnetic coupling between different nitrogen atoms is discussed, and the results show that the hole-mediated short-range p-p exchange mechanism is responsible for the predicted ferromagnetism. Calculations also reveal that experimentally observed red-shift should be N-2p gap states to band transition Crown Copyright (C) 2010 Published by Elsevier Ltd All rights reserved
Ferromagnetism of Mn-doped GaN polycrystalline powders

H. Li,B. Song,H.Q. Bao,G. Wang,W.J. Wang,X.L. Chen

DOI: https://doi.org/10.1016/j.jmmm.2008.09.016

IF: 3.097

2009-01-01

Journal of Magnetism and Magnetic Materials

Abstract:Ferromagnetic ordering is observed in Mn-doped GaN polycrystalline powders synthesized by a modified solid-state metathesis route. The synthesized powders show hysteresis loops at 150K. Curie temperature is about 300K concluded from the difference between the field-cooled and zero-field-cooled magnetizations. The characterizations of the powder samples by powder X-ray diffraction, inductively coupled plasma-atomic emission spectrometry, and temperature dependence of magnetizations suggest that the room-temperature ferromagnetic ordering is the intrinsic property of Mn-doped GaN.
Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Q. Wang,Q. Sun,P. Jena

DOI: https://doi.org/10.1103/PhysRevB.75.035322

IF: 3.7

2007-01-01

Physical Review B

Abstract:First principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped Ga1-xMnxN thin films. We show that the ground state of Mn-doped GaN (10 (1) over bar0) thin film, with Mn replacing the Ga sites, is antiferromagnetic but becomes ferromagnetic when it is codoped with C. The interaction between the Mn spins via the delocalized holes introduced by codoping of C at N sites is responsible for this transition. The overlap between Mn 3d and C 2p in the spin-up band renders half-metallic character to the C codoped (Ga,Mn)N system. The observed ferromagnetism in (Ga,Mn)N thin films is believed to be associated with defects or codoping with other elements during the film growth. The present study provides the theoretical understanding for many recent experiments on the Mn-doped GaN system.
Electronic and Magnetic Properties of Manganese and Iron-Doped Ganasn Nanocages (N=7-12)

Jianguang Wang,Li Ma,Jijun Zhao,Guanghou Wang,Xiaoshuang Chen,R. Bruce King

DOI: https://doi.org/10.1063/1.2960625

2008-01-01

Abstract:The electronic and magnetic properties of Mn- or Fe-doped Ga(n)As(n) (n=7-12) nanocages were studied using gradient-corrected density-functional theory considering doping at substitutional, endohedral, and exohedral sites. When doped with one atom, the most energetically favorable site gradually moves from surface (n=7-11) to interior (n=12) sites for the Mn atom, while the most preferred doping site of the Fe atom alternates between the surface (n=7,9,11) and interior (n=8,10,12) sites. All of the ground-state structures of Mn@Ga(n)As(n) have the atomlike magnetic moment of 5mu(B), while the total magnetic moments of the most stable Fe@Ga(n)As(n) cages for each size are about 2mu(B) except for the 4mu(B) magnetic moment of Fe@Ga(12)As(12). Charge transfer and hybridization between the 4s and 3d states of Mn or Fe and the 4s and 4p states of As were found. The antiferromagnetic (AFM) state of Mn(2)@Ga(n)As(n) is more energetically favorable than the ferromagnetic (FM) state. However, for Fe(2)@Ga(n)As(n) the FM state is more stable than the AFM state. The local magnetic moments of Mn and Fe atoms in the Ga(n)As(n) cages are about 4mu(B) and 3mu(B) in the FM and AFM states, respectively. For both Mn and Fe bidoping, the most energetically favorable doping sites of the transition metal atoms are located on the surface of the Ga(n)As(n) cages. The computed magnetic moments of the doped Fe and Mn atoms agree excellently with the theoretical and experimental values in the Fe(Mn)GaAs interface as well as (Ga, Mn)As dilute magnetic semiconductors.
Anomalous Magnetic Behavior Of Mn-Mn Dimers In The Dilute Magnetic Semiconductor (Ga,Mn)N

Qinghua Liu,Zhihu Sun,Wensheng Yan,Wenjie Zhong,Zhiyun Pan,Luyuan Hao,Shiqiang Wei

DOI: https://doi.org/10.1103/PhysRevB.76.245210

IF: 3.7

2007-01-01

Physical Review B

Abstract:First-principles calculations were performed to study the electronic structure and magnetic interactions of Mn-Ga-Mn-I dimer formed by the neighboring substitutional Mn-Ga and interstitial Mn-I ions in the zinc-blende structured (Ga,Mn)N dilute magnetic semiconductor. On the basis of the formation energy calculations, we show that the clustering of Mn-Ga and Mn-I in (Ga,Mn)N is energetically favored. The Mn-Ga and Mn-I ions in the Mn-Ga-Mn-I dimer are antiferromagnetically coupled, but this cannot strikingly reduce the magnetic moments induced by Mn-Ga due to the strong localization character of Mn-I gap states. It is found that Mn-Ga-Mn-I dimer in zinc-blende structured (Ga,Mn)N possesses unique electronic and magnetic properties, as compared with their counterparts in wurtzite structured (Ga,Mn)N or zinc-blende structured (Ga,Mn)As. The present study can provide some insight into understanding the rather scattered magnetic moment per Mn ion observed experimentally.
Cluster-glass state and the effect of A-site magnetism in electron-doped manganites

Langsheng Ling,Lei Zhang,Zhitao Zhang,Li Pi,Shun Tan,Yuheng Zhang

DOI: https://doi.org/10.1016/j.ssc.2009.05.005

IF: 1.934

2009-01-01

Solid State Communications

Abstract:The magnetic properties of Y 0.35Ln0.05Ca0.6MnO3 (Ln = La, Pr, Nd, Sm, Gd, Dy) have been investigated thoroughly. The small average cationic radius 〈rA〉 of the present system results in a short-range antiferromagnetic charge-ordering (AFM-CO) state in the manganites. With the decrease of temperature, a super-exchange interaction begins to establish itself between the remaining disordered Mn ions after the formation of the short-range CO state. Then, the reentrant cluster-glass state originates from the frustration between the FM order in the clusters and the AFM interactions present in the background matrix. However, the large magnetic moments of Gd3+ and Dy3+ ions apply an internal magnetic field on the Mn3+ and Mn4+ ions, which results in the suppression of the cluster-glass state.
Clustering of Cr in GaN Nanotubes and the Onset of Ferrimagnetic Order

Q. Wang,Q. Sun,P. Jena,Y. Kawazoe

DOI: https://doi.org/10.1103/physrevb.73.205320

IF: 3.7

2006-01-01

Physical Review B

Abstract:A comprehensive theoretical study of the structure and magnetic properties of Cr-doped GaN nanotubes yields some interesting and unexpected results: (1) A single wall GaN nanotube constructed from the GaN wurtzite crystal relaxes to a carbon-like zigzag SWNT structure and remains stable at $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, while a multiwall GaN nanotube retains its original wurtzite form. (2) Cr atoms prefer to form clusters and the underlying magnetism depends on the degree of clustering. (3) The coupling between two Cr atoms mediated by the neighboring N is ferromagnetic, but changes to ferrimagnetic as the cluster grows. These results are based on spin polarized density functional theory with exchange and correlation potential approximated by both the generalized gradient approximation and the local spin density approximation $+U$ methods.

Homotopy groups of K-contact toric manifold

Nitrogen-Induced Magnetic Transition In Small Chromium Clusters

Magnetism in Mn Nanowires and Clusters as δ-doped Layers in Group IV Semiconductors (Si, Ge)

Ferromagnetism in Mn-doped GaN Nanowires.

Martensitic transition, ferrimagnetism and Fermi surface nesting in Mn_2NiGa

Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Inhomogeneous Magnet NaMn<sup>III</sup>[BP<sub>2</sub>O<sub>7</sub>(OH)<sub>3</sub>]: Ferromagnetic Clusters Inserted in a Metamagnetic Matrix

Structural and paramagnetic properties of dilute Ga1-xMnxN

First-Principles Study of Electronic and Magnetic Properties of Co<sub><i>n</i></sub>Mn<sub><i>m</i></sub>and Co<sub><i>n</i></sub>V<sub><i>m</i></sub>(<i>m</i>+<i>n</i>≤ 6) Clusters

Nitrogen Vacancy Effects on the Ferromagnetism of Mn Doped GaN Films

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Ferromagnetism of MnO anchored on graphene with N dopant

First-principles study of electronic and magnetic properties of Co(n)Mn(m) and Co(n)V(m) (m + n < or = 6) clusters.

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Electronic Structure and Magnetic Properties in Nitrogen-doped from Density Functional Calculations

Ferromagnetism of Mn-doped GaN polycrystalline powders

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Electronic and Magnetic Properties of Manganese and Iron-Doped Ganasn Nanocages (N=7-12)

Anomalous Magnetic Behavior Of Mn-Mn Dimers In The Dilute Magnetic Semiconductor (Ga,Mn)N

Cluster-glass state and the effect of A-site magnetism in electron-doped manganites

Clustering of Cr in GaN Nanotubes and the Onset of Ferrimagnetic Order