Computer simulations of structural and hopping conduction properties of disordered solids

Krisztian Kohary

DOI: https://doi.org/10.48550/arXiv.cond-mat/0201312

2002-01-18

Abstract:1. Introduction 2. Molecular dynamics simulation of amorphous carbon structures 3. Atomistic simulation of the bombardment process during the BEN phase of diamond CVD 4. Growth of amorphous silicon 5. One-dimensional hopping in disordered organic solids

Materials Science,Disordered Systems and Neural Networks

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on two aspects:

1. **Structural research of amorphous carbon and amorphous silicon**: Through computer simulations, especially molecular dynamics (MD) simulations, to understand the microstructure of amorphous materials (such as amorphous carbon and amorphous silicon). Due to the lack of long - range order, the structures of these materials are difficult to be described by traditional crystallographic methods. Therefore, researchers need to develop new models and methods to explain the physical properties of these materials.

2. **Carrier mobility in quasi - one - dimensional disordered organic solids**: To study the transport behavior of carriers (such as electrons or holes) in disordered organic solids, especially in quasi - one - dimensional systems. This involves analyzing the drift mobility under different models and verifying theoretical predictions through Monte Carlo simulations.

Specifically, the main chapter contents of the paper are as follows:

- **Chapter 2**: Use molecular dynamics simulations to study the growth process of the amorphous carbon structure. The focus is on how to form amorphous carbon films under the condition of low - energy carbon atom bombardment, and analyze its structural properties such as density, radial distribution function, coordination number, and bond - angle distribution.

- **Chapter 3**: Through atomic - scale simulations, study the bombardment process in the bias - enhanced nucleation (BEN) stage during the diamond chemical vapor deposition (CVD) process. Explore the generation of the hydrogenated amorphous carbon surface model and its structural rearrangement under the bombardment condition.

- **Chapter 4**: Study the growth of the amorphous silicon structure, using the same preparation method as for amorphous carbon. Analyze the time evolution, density change, ring statistics, coordination number, and radial distribution function during the growth process.

- **Chapter 5**: Through Monte Carlo simulations, study the carrier hopping conduction mechanism in quasi - one - dimensional disordered organic solids. Consider the random barrier model, uncorrelated and correlated random energy models, and discuss the influence of nearest - neighbor hopping and long - distance tunneling.

In summary, this paper aims to deeply understand the structure and charge - transport characteristics of amorphous materials through computer simulation techniques, and provide theoretical support for the practical applications of these materials.