Acid-base engineered strategy of HKUST-1 dopants for high electrical conductivity of single-walled carbon nanotubes films

Gui-Sen Tian,Ze-Miao Xiong,Jing-Yi Wang,Zhi-Xiang Xia,Ping Fu,Yun-Fei Zhang,Fei-Peng Du
DOI: https://doi.org/10.1016/j.diamond.2023.110719
IF: 3.806
2023-12-21
Diamond and Related Materials
Abstract:The improvement of electrical conductivity of carbon nanotubes is still a challenge via tuning the carrier concentration and mobility with organic or inorganic dopants due to low doping efficiency. In this paper, single-walled carbon nanotubes (SWCNTs) have been doped with Cu 3 (BTC) 2 ·(H 2 O) 3 (HKUST-1) as metal organic frameworks via simple mixing and vacuum filtration method. With fine acid or base post-treatment, the crystal structure of HKUST-1 was broken into fragments with more active sites and provided plenty of carriers injecting into SWCNTs. The electrical conductivity of SWCNTs/HKUST-1 films was increased by almost 2.5 times compared to pristine SWCNTs at room temperature. The defect tuning of dopants on SWCNTs surface is an effective carrier injection strategy, which provides a way to improve the electrical conductivity of SWCNTs.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
What problem does this paper attempt to address?