Quantum oscillations of spin current through a III-V semiconductor loop

A.G. Mal'shukov,V. Shlyapin,K.A. Chao

DOI: https://doi.org/10.1103/PhysRevB.66.081311

2001-12-13

Abstract:We have investigated the transport of spin polarization through a classically chaotic semiconductor loop with a strong Rashba spin-orbit interaction. We found that if the escape time of a particle is long enough, the configuration averaged spin conductance oscillates strongly with the geometric spin phase. We predict a sizable rotation of spin polarization along its flowing path across the loop from the injector to the collector. We have also discovered a quantized universal spin relaxation in a 2D reservoir connected to such a semiconductor loop.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to study and control the transport properties of spin - polarized currents in III - V semiconductor rings with strong Rashba spin - orbit interaction (SOI). Specifically, the author focuses on the quantum oscillation phenomenon of spin - polarized currents passing through such semiconductor rings under classical chaotic conditions.

### Problem Background

In the emerging field of spintronics, achieving effective control of spin currents in semiconductor nanostructures is an urgent task. Especially in narrow - gap III - V semiconductors, due to the strong spin - orbit splitting effect, the spin - polarized current can be manipulated by adjusting the applied gate voltage. A typical example is the spin - valve transistor, in which the spin polarization precesses in a two - dimensional semiconductor channel, and its angle can be adjusted by the strength of the spin - orbit interaction.

### Core Problem of the Paper

The author explores an interesting phenomenon in this paper: In a two - dimensional semiconductor ring, when an electron moves along a closed path, due to the spin - orbit interaction (SOI), its wave function will accumulate an additional phase ψ. This phase not only depends on the shape and length of the path but also leads to the quantum oscillation of the spin current. Different from the traditional Aharonov - Bohm effect, these oscillations appear in the classical spin conductance and can be regulated by changing the gate voltage.

### Main Findings

1. **Quantum Oscillation of Spin Conductance**: When the escape time of particles in the ring is long enough, the spin conductance after configuration averaging will oscillate strongly with the geometric spin phase.
2. **Rotation of Spin Polarization**: During the process from the injector to the collector, the spin polarization will rotate significantly.
3. **Spin Relaxation in Two - Dimensional Reservoirs**: A universal quantized spin relaxation phenomenon has been found in the two - dimensional reservoirs connected to the semiconductor ring.

### Formula Summary

To describe these phenomena, the author introduced the following key formulas:

- Spin - dependent conductance:
\[
g_{\alpha\beta\gamma\delta}=\frac{e^{2}}{h}\sum_{n,m}t_{\alpha\beta}^{nm}(t_{\gamma\delta}^{nm})^{*}
\]

- Spin evolution operator:
\[
S_{a}=T\left[\exp\left(-i\frac{\alpha}{\hbar m^{*}}\int_{a}z\times\sigma(r)\cdot dr\right)\right]
\]

- Averaged spin conductance:
\[
\langle g_{ij}\rangle=\frac{e}{h}\sum_{a}|t_{0}(a)|^{2}D_{a}^{ij}
\]
where \(D_{a}^{ij}=\text{Tr}(\sigma_{i}S_{a}\sigma_{j}S_{a}^{\dagger})\)

- Spin relaxation rate:
\[
\Gamma=\frac{N\hbar}{m^{*}V}[1 - A(\psi)]
\]
where \(A(\psi)=\frac{\kappa^{2}}{\kappa^{2}+4\sin^{2}\psi}\)

### Conclusion

This paper shows the quantum oscillation phenomenon of spin currents and its regulation methods in III - V semiconductor rings with strong spin - orbit interaction. These findings provide a theoretical basis for the design of spintronic devices and reveal new physical mechanisms in the spin - transport process.