Why extra gauge Bosons should exist and how to hunt them

A. Leike

DOI: https://doi.org/10.1002/1521-3978%28200205%2950%3A5/7%3C538%3A%3AAID-PROP538%3E3.0.CO%3B2-7

2001-11-23

Abstract:Werner Heisenberg's work is the foundation for many topics of present research. This is also true for the search for extra gauge bosons. The prospects of future colliders in this search are shortly mentioned.

High Energy Physics - Phenomenology

What problem does this paper attempt to address?

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

R. N. Bhatt,Mona Berciu,Malcolm P. Kennett,Xin Wan

DOI: https://doi.org/10.1023/A:1014031327996

2002-01-01

Journal of Superconductivity

Abstract:This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II–VI and III–V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating) regime, although we believe that some of the unusual features of the magnetization curves should qualitatively be present at larger dopings (metallic regime) as well. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.
Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

RN Bhatt,CG Zhou,M Kennett,M Berciu,W Xin

DOI: https://doi.org/10.1142/s0217979205027858

2005-01-01

Abstract:We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as (Ga,Mn)As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.
A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

J. Fernandez-Rossier,L. J. Sham

DOI: https://doi.org/10.1103/PhysRevB.64.235323

2001-07-09

Abstract:A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the itinerant carriers and the charge and localized spins of the impurities. The theory is applied to study the Curie temperature of planar heterostructures of III-V semiconductors doped with manganese atoms. The mean-field, virtual-crystal and effective-mass approximations are adopted to calculate the electronic structure, including the spin-orbit interaction, and the magnetic susceptibilities, leading to the Curie temperature. By means of these results, we attempt to understand the observed dependence of the Curie temperature of planar $\delta$-doped ferromagnetic structures on variation of their properties. We predict a large increase of the Curie Temperature by additional confinement of the holes in a $\delta$-doped layer of Mn by a quantum well.

Condensed Matter
Theory of ferromagnetic (III,Mn)V semiconductors

T. Jungwirth,Jairo Sinova,J. Mašek,J. Kučera,A. H. MacDonald

DOI: https://doi.org/10.1103/revmodphys.78.809

IF: 50.485

2006-08-11

Reviews of Modern Physics

Abstract:The body of research on (III,Mn)V diluted magnetic semiconductors (DMSs) initiated during the 1990s has concentrated on three major fronts: (i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, (ii) the materials science of growth and defects, and (iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173K in (Ga,Mn)As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for (III,Mn)V DMSs is a central question in the field and motivates many of the analyses presented in this review.

physics, multidisciplinary
Numerical Simulations Of Random Spin (And Fermionic) Models With A Wide Distribution Of Energy Scales

R.N. Bhatt,Xin Wan,Malcolm P. Kennett,Mona Berciu

DOI: https://doi.org/10.1016/S0010-4655(02)00379-X

IF: 4.717

2002-01-01

Computer Physics Communications

Abstract:The magnetic behavior of semiconductors doped with randomly distributed magnetic elements (such as iron or manganese) and/or bound carriers (such as phosphorus or boron in silicon) are described by many-body Hamiltonians with a broad distribution of coupling constants and energy scales. These wide distributions (covering several orders of magnitude in some cases) lead to unusual properties, such as strong suppression of magnetic phase transitions due to quantum fluctuations, unusual thermodynamic behavior in the magnetically ordered phase, etc. The wide distributions also pose several challenges to both analytical and computational approaches used to calculate the physical properties of such systems. We describe some of the techniques that have been applied successfully to such systems, including numerical renormalization group as well as Monte Carlo methods. Examples are drawn from lightly doped conventional semiconductors [Si, Gel as well as diluted magnetic semiconductors [such as (Cd,Mn)Te and (Ga,Mn)As]. Extension of these methods to diluted magnetic semiconductors in the metallic regime with itinerant carriers (fermionic degrees of freedom) is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors

Georges Bouzerar,Timothy Ziman,Josef Kudrnovsky

DOI: https://doi.org/10.1209/epl/i2004-10473-1

2004-05-14

Abstract:We present a semi-analytic theory for the Curie temperature in diluted magnetic semi-conductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings are taken from concentration dependent {\it ab initio} estimates. The theory gives very good agreement with published data for well-annealed samples of Mn$_x$Ga$_{1-x}$As. We predict the critical temperatures for Mn$_x$Ga$_{1-x}$N lower than in doped GaAs, despite the stronger nearest-neighbour ferromagnetic coupling. We also predict the dependence on the hole concentration.

Disordered Systems and Neural Networks,Materials Science
Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors

Georges Bouzerar,Richard Bouzerar

DOI: https://doi.org/10.48550/arXiv.1511.02127

2015-11-06

Abstract:After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations Mn doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities ? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach in the dilute regime room temperature ferromagnetism? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double exchange type in (Ga,Mn)N? In spite of the great success of density functional theory based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS.

Disordered Systems and Neural Networks,Materials Science
Magnetic Doping Of Group Iv Semiconductors

Mustafa M. Oezer,Changgan Zeng,Hanno H. Weitering

DOI: https://doi.org/10.1201/9780429065507-7

2010-01-01

Abstract:This review addresses recent developments in the general area of group IV dilute magnetic semiconductors (DMS), focusing on fundamental physics issues as well as the promises and limitations of the actual materials from an experimentalist's perspective. This class of materials is of strategic significance in developing a spin-based information technology that will be compatible with the existing silicon platform. The fundamental physics issues surrounding the mechanisms of electrical transport and magnetism in group IV DMS revolve around the weak-coupling versus strong-coupling pictures of ferromagnetic exchange, the presence of delocalized valence-band holes versus impurity-band carriers, and the nature of the ferromagnetic transition. Materials issues revolve around the solid solubility of Mn dopants, spinodal decomposition, substitutional versus interstitial incorporation of the magnetic dopants, formation of superparamagnetic precipitates, magneto-resistance, transport percolation and the true nature of the observed magnetic order. This review specifically focuses on Mn-doped germanium grown via conventional molecular beam epitaxy. New developments such as the use of surfactants and n-type co-dopants will be highlighted as promising avenues for future research.
Theoretical models of ferromagnetic III-V semiconductors

T. Jungwirth,Jairo Sinova,J. Kučera,A. H. MacDonald

DOI: https://doi.org/10.1016/j.cap.2002.11.001

2002-10-15

Abstract:Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containing magnetic elements toward room temperature. Reaching this goal would make information technology applications of these materials likely. In this article we briefly review the status of work over the past five years which has attempted to achieve a theoretical understanding of these complex magnetic systems. The basic microscopic origins of ferromagnetism in the (III,Mn)V compounds that have the highest transition temperatures appear to be well understood, and efficient computation methods have been developed which are able to model their magnetic, transport, and optical properties. However many questions remain.

Materials Science,Mesoscale and Nanoscale Physics
Ordering effects in diluted magnetic semiconductors

Josef Kudrnovský,V. Drchal,Georges Bouzerar,Richard Bouzerar

DOI: https://doi.org/10.48550/arXiv.0707.3079

2007-07-20

Abstract:We review recently developed two-step approach for description of electronic and magnetic properties of a new class of materials, the diluted magnetic semiconductors. In the first step we construct, on the basis of the state-of-the-art first-principles electronic structure calculations, the effective Ising and Heisenberg Hamiltonians which describe, respectively, the alloy phase stability and the magnetic excitations in the system. In the second step, we analyze properties of these effective Hamiltonians by various methods of statistical physics. As a case study, the prototypical diluted magnetic semiconductor Ga_{1-x}Mn_{x}As is studied in detail. We determine, among others, a possibility for clustering in this system, formation energies of various compensating defects, and estimate short-range order parameters describing ordering tendencies in a system. On the other hand, by using recently developed local random-phase approximation approach, we evaluate the system Curie temperature and demonstrate its strong dependence on the sample preparation. We also emphasize the relevance of proper inclusion of the randomness in positions of magnetic impurities for a reliable estimate of the system critical temperature. Finally, we compare calculated Curie temperatures with available experimental data and briefly mention relation to other theoretical approaches.

Materials Science,Disordered Systems and Neural Networks
Ferromagnetism in III-V and II-VI semiconductor structures

Tomasz Dietl,Hideo Ohno

DOI: https://doi.org/10.1016/S1386-9477%2800%2900193-4

2000-03-29

Abstract:The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the ferromagnetism has been observed for the modulation-doped p-type Cd1-xMnxTe/Cd1-y-zMgyZnzTe:N heterostructures, and more recently, in Zn1-xMnxTe:N epilayers. On the theoretical side, a model is presented, which takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of confinement and strain upon the hole density-of-states and response function, and (iii) the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. A comparison between experimental and theoretical results demonstrates that the model can describe the magnetic circular dichroism, the values of TC observed in the studied systems as well as explain the directions of the easy axis and the magnitudes of the corresponding anisotropy fields as a function of confinement and biaxial strain. Various suggestions concerning design of novel ferromagnetic semiconductor systems are described.

Materials Science,Disordered Systems and Neural Networks
Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai

DOI: https://doi.org/10.1063/1.484013

2013-11-26

Abstract:Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

Mesoscale and Nanoscale Physics,Materials Science
How to make semiconductors ferromagnetic: A first course on spintronics

S. Das Sarma,E. H. Hwang,A. Kaminski

DOI: https://doi.org/10.1016/S0038-1098%2803%2900337-5

2003-04-10

Abstract:The rapidly developing field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10 %), is discussed with the emphasis on elucidating the physical mechanisms underlying the magnetic properties. Recent key developments are summarized with critical discussions of the roles of disorder, localization, band structure, defects, and the choice of materials in producing good magnetic quality and high Curie temperature. The correlation between magnetic and transport properties is argued to be a crucial ingredient in developing a full understanding of the properties of ferromagnetic semiconductors.

Materials Science
Towards a Comprehensive Theory of Metal-Insulator Transitions in Doped Semiconductors

S. Kettemann

DOI: https://doi.org/10.1016/j.aop.2023.169306

2023-10-04

Abstract:A review is given on the theory of metal-insulator transitions (MIT) in doped semiconductors. We focus in particular on reviewing theories of their anomalous magnetic properties, which emerge from the interplay of spin and charge correlations and disorder.Building on the review of these existing theories and experiments, we suggest that the finite temperature phase diagram can be structured into 1. a random quantum spin liquid phase at subcritical doping and low temperature, as described by the Bhatt-Lee theory of random spin clusters, mostly random singlets. 2. a critical non-Fermi-liquid fan, originating at the MIT, which is dominated by random Kondo singlets with a universal tail of the distribution of their binding energies. This is caused by multifractality and results in an anomalous power law divergence of the magnetic susceptibility with a universal power and 3. a supercritical, low temperature phase. Rare events caused by the random placement of dopants do not allow to define strict phase boundaries. Remaining open problems are reveiwed and outlined. Finally, the possibility of finite temperature delocalization transitions is reviewed, which arcaused by the correlation induced temperature dependence of the spin scattering rate from magnetic moments. This review article is devoted to the memory of Konstantin B. Efetov.

Disordered Systems and Neural Networks,Strongly Correlated Electrons
Magnetic interactions in IV-VI diluted magnetic semiconductors

M. Górska,Ł. Kilański,A. Łusakowski

2023-08-03

Abstract:Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities and differences between magnetic properties of II-VI, IV-VI, and III-V DMS. We focus on the influence of the crystalline and electronic structure of the material on its magnetic properties, especially on the exchange interactions among magnetic ions. We describe methods of determination of the exchange parameters by using different experimental techniques, such as measurements of magnetic susceptibility, magnetization, and specific heat. We follow the development in the material technology from bulk crystals to thin films and nanostructures.

Materials Science
Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

E. H. Hwang,S. Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.72.035210

2005-03-04

Abstract:The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, doping, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism. We find that spin-disorder scattering, formation of bound state, and the population of the minority spin band are all operational in DMFT in different parameter range. We also develop a complementary Boltzmann transport theory for scattering by screened ionized impurities. The difference in the screening properties between paramagnetic ($T>T_c$) and ferromagnetic ($T<T_c$) states gives rise to the temperature dependence (increase or decrease) of resistivity, depending on the carrier density, as the system goes from the paramagnetic phase to the ferromagnetic phase. The metallic behavior below $T_c$ for optimally doped DMS samples can be explained in the Boltzmann theory by temperature dependent screening and thermal change of carrier spin polarization.

Materials Science,Disordered Systems and Neural Networks
Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Byounghak Lee,T Jungwirth,A H MacDonald

DOI: https://doi.org/10.1088/0268-1242/17/4/311

IF: 2.048

2002-03-21

Semiconductor Science and Technology

Abstract:Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this paper we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanisms that cause of magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage and other system parameters that can in principle be engineered to yield desired results. We emphasize that hole densities at the Mn ion locations that exceed 1020 cm−3 are a necessary condition for high ferromagnetic transition temperatures in any geometry.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Recent advances in application-oriented new generation diluted magnetic semiconductors

Yi Peng,Guo-Qiang Zhao,Zheng Deng,Chang-Qing Jin,,

DOI: https://doi.org/10.7498/aps.73.20231940

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Diluted ferromagnetic semiconductors (DMSs) have attracted widespread attention in last decades, owing to their potential applications in spintronic devices. But classical group-III-IV, and -V elements based DMS materials, such as (Ga,Mn)As which depend on heterovalent (Ga 3+ , Mn 2+ ) doping, cannot separately control carrier and spin doping, and have seriously limited chemical solubilities, which are disadvantages for further improving the Curie temperatures. To overcome these difficulties, a new-generation DMS with independent spin and charge doping have been designed and synthesized. Their representatives are I-II-V based Li(Zn,Mn)As and II-II-V based (Ba,K)(Zn,Mn) 2 As 2 . In these new materials, doping isovalent Zn 2+ and Mn 2+ introduces only spins, while doping heterovalent non-magnetic elements introduces only charge. As a result, (Ba,K)(Zn,Mn) 2 As 2 achieves Curie temperature of 230 K, a new record among DMS where ferromagnetic orderings are mediated by itinerate carriers. Herein, we summarize the recent advances in the new-generation DMS materials. The discovery and synthesis of several typical new-generation DMS materials are introduced. Physical properties are studied by using muon spin relaxation, angle-resolved photoemission spectroscopy and pair distribution function. The physical and chemical pressure effects on the title materials are demonstrated. The Andreev reflection junction based on single crystal and the measurement of spin polarization are exhibited. In the end, we demonstrate the potential multiple-parameter heterojunctions with DMSs superconductors and antiferromagnetic materials.

physics, multidisciplinary
Electronic Structure of III-V Zinc-Blende Semiconductors from First Principles

Yin Wang,Haitao Yin,Ronggen Cao,Ferdows Zahid,Yu Zhu,Lei Liu,Jian Wang,Hong Guo

DOI: https://doi.org/10.1103/physrevb.87.235203

IF: 3.7

2013-01-01

Physical Review B

Abstract:For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor compounds. Our calculations are from density functional theory with the semilocal exchange proposed recently [Tran and Blaha, Phys. Rev. Lett. 102, 226401 (2009)], within the linear muffin tin orbital scheme. The calculated band gaps and effective masses are compared to experimental data and good quantitative agreement is obtained. Using the theoretical scheme presented here, quantum transport in nanostructures of III-V compounds can be confidently predicted.
Ferromagnetism in Transition-Metal-Doped Ii-Vi Compounds

Yong Liu,Bang-Gui Liu

DOI: https://doi.org/10.1016/j.jmmm.2006.04.009

IF: 3.097

2006-01-01

Journal of Magnetism and Magnetic Materials

Abstract:We report systematical density-functional calculations of ternary transition-metal compounds based on zineblende ZnTe and CdTe semiconductor. Some of them are half-metallic at their optimized cell volumes. The effect of atomic position optimization (and cell volume re-optimization) on the electronic structures is to widen the energy bands near the Fermi energy and to reduce the density of states there. As a result, the Fermi level moves upward and the energy gap of the minority-spin bands at the Fermi energy becomes narrower. Therefore, the half-metallic gaps are reduced, two of them even being closed. These compounds are compatible with the II-VI semiconductors, and could be useful in spin-based electronics. (c) 2006 Elsevier B.V. All rights reserved.

Why extra gauge Bosons should exist and how to hunt them

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

A theory of ferromagnetism in planar heterostructures of (Mn,III)-V semiconductors

Theory of ferromagnetic (III,Mn)V semiconductors

Numerical Simulations Of Random Spin (And Fermionic) Models With A Wide Distribution Of Energy Scales

Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors

Unraveling the nature of carrier mediated ferromagnetism in diluted magnetic semiconductors

Magnetic Doping Of Group Iv Semiconductors

Theoretical models of ferromagnetic III-V semiconductors

Ordering effects in diluted magnetic semiconductors

Ferromagnetism in III-V and II-VI semiconductor structures

Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

How to make semiconductors ferromagnetic: A first course on spintronics

Towards a Comprehensive Theory of Metal-Insulator Transitions in Doped Semiconductors

Magnetic interactions in IV-VI diluted magnetic semiconductors

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Recent advances in application-oriented new generation diluted magnetic semiconductors

Electronic Structure of III-V Zinc-Blende Semiconductors from First Principles

Ferromagnetism in Transition-Metal-Doped Ii-Vi Compounds