Why extra gauge Bosons should exist and how to hunt them

A. Leike

DOI: https://doi.org/10.1002/1521-3978%28200205%2950%3A5/7%3C538%3A%3AAID-PROP538%3E3.0.CO%3B2-7

2001-11-23

Abstract:Werner Heisenberg's work is the foundation for many topics of present research. This is also true for the search for extra gauge bosons. The prospects of future colliders in this search are shortly mentioned.

High Energy Physics - Phenomenology

What problem does this paper attempt to address?

### Problems the paper attempts to solve

This paper aims to explore the latest progress of density functional theory (DFT) in understanding the physical properties of diluted magnetic semiconductors (DMSs). Specifically, the article focuses on transition - metal - doped III - V diluted magnetic semiconductor materials. These materials exhibit spontaneous ferromagnetic order at relatively high temperatures and have good structural compatibility with existing III - V devices.

#### Main problems and goals:

1. **Study the influence of local doping defects and disorder on magnetic properties**:
- Use DFT to study the influence of local doping defects and disorder on magnetic properties in order to better understand the microscopic mechanisms of these materials.

2. **Predict the properties of new materials**:
- Utilize DFT to predict the properties of new diluted magnetic semiconductor materials and provide theoretical guidance for experiments.

3. **Provide parameters for model Hamiltonian calculations**:
- Provide parameters that are difficult to obtain experimentally, such as the exchange constant \(N_0\beta\), etc., for the calculation of the model Hamiltonian, so as to describe the magnetic behavior of materials more accurately.

### Background and motivation

In recent years, the concept of spintronics has attracted wide attention, especially in the application in high - density data storage devices. However, existing spintronics devices (such as GMR sensors) have not fully utilized the potential of spintronics. In order to realize the integration of logic elements and data storage in the same device, researchers have begun to focus on all - semiconductor devices, especially magnetic semiconductors.

III - V diluted magnetic semiconductors (such as (Ga,Mn)As) have attracted much attention because of their good compatibility with existing III - V technologies. Although the doping concentration is low, these materials can still exhibit long - range ferromagnetic order and have a significant Curie temperature (\(T_c\)). For example, the highest Curie temperature of (Ga,Mn)As can reach 110K, and recent research shows that the Curie temperature of (Ga,Mn)N can even reach 940K.

### Research methods

The paper mainly uses density functional theory (DFT) to study the electronic, magnetic and structural properties of these materials. DFT is an efficient microscopic theory that can describe the ground - state properties of electron systems with a large number of degrees of freedom. Through improved numerical implementations (such as efficient basis sets and approximation methods), DFT can study systems containing hundreds of atoms, which is especially important for diluted magnetic semiconductors with low doping concentrations.

### Conclusions

This paper demonstrates the powerful ability of DFT in describing the properties of diluted magnetic semiconductor materials, especially in the following aspects:
- Studying the influence of local doping defects and disorder on magnetic properties;
- Predicting the properties of new materials;
- Providing parameters that are difficult to obtain experimentally for the calculation of the model Hamiltonian.

These research results not only help to understand the microscopic mechanisms of diluted magnetic semiconductors, but also provide a theoretical basis for the development of new spintronics devices.