First Results from the SPICES Survey

Daniel Stern,Andrew Connolly,Peter Eisenhardt,Richard Elston,Brad Holden,Piero Rosati,S.A.Stanford,Hyron Spinrad,Paolo Tozzi,K.L. Wu

DOI: https://doi.org/10.1007/10854354_14

2000-12-07

Abstract:We present first results from SPICES, the Spectroscopic, Photometric, Infrared-Chosen Extragalactic Survey. SPICES is comprised of four ~30 square arcminute high Galactic latitude fields with deep BRIzJK imaging reaching depths of ~25th magnitude (AB) in the optical and ~23rd magnitude (AB) in the near-infrared. To date we have 626 spectroscopic redshifts for infrared-selected SPICES sources with K<20 (Vega). The project is poised to address galaxy formation and evolution to redshift z~2. We discuss initial results from the survey, including the surface density of extremely red objects and the fraction of infrared sources at z>1. One of the SPICES fields has been the target of a deep 190 ksec Chandra exposure; we discuss initial results from analysis of that data set. Finally, we briefly discuss a successful campaign to identify high-redshift sources in the SPICES fields.

Astrophysics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the changes in Landau levels of electrons (or holes) in a magnetic field in the presence of topological defects. Specifically, the author analyzes the behavior of electrons in a magnetic field in the presence of the following types of topological defects:

1. **Continuously distributed dislocation density**: The changes in the energy spectrum and wave function of electrons in the presence of continuously distributed dislocations are studied.
2. **Magnetic screw dislocation**: The influence of screw dislocations on Landau levels is explored, especially when there is magnetic flux inside the dislocation.
3. **Discretized dislocation**: The influence of dislocations with both curvature and torsion on Landau levels is studied.

### Main problem summary:
- **Influence of topological defects on Landau levels**: The author studies the influence of different types of topological defects (such as dislocations, discretized dislocations, etc.) on Landau levels by geometric theory methods. These defects will break the infinite degeneracy of Landau levels, and different defect types will lead to different degrees of degeneracy breaking.

- **Changes in energy spectrum**: For each defect type, the author derives exact energy expressions and eigenfunctions. These results show that the existence of topological defects causes significant changes in the energy spectrum of Landau levels.

- **Advantages of geometric methods**: Compared with traditional elastic theory methods, geometric methods can handle these problems more conveniently and can obtain exact solutions. Traditional methods usually need to use perturbation theory to solve the Schrödinger equation, while geometric methods can directly describe the influence of defects through metrics.

### Formula summary:
- **Hamiltonian**: In the presence of topological defects, the form of the Hamiltonian is:
\[
H = \frac{1}{2m\sqrt{g}} \left( p_i - \frac{q}{c} A_i \right) \sqrt{g} g^{ij} \left( p_j - \frac{q}{c} A_j \right)
\]
where \( g_{ij} \) is the metric describing the defect, and \( A_i \) is the vector potential.

- **Landau level formula**:
- For continuously distributed dislocations:
\[
E = \frac{\hbar \omega_H}{2\alpha} \left( 2n + \frac{|l|}{\alpha} \pm \frac{l}{\alpha} + 1 \right) + \frac{\hbar^2 k^2}{2m}
\]
- For magnetic screw dislocations:
\[
E = \hbar \omega_B \left\{ n + \frac{|l - \beta k + \frac{\Phi}{2\pi}|}{2} - \frac{(l - \beta k + \frac{\Phi}{2\pi})^2}{2} + \frac{1}{2} \right\} + \frac{\hbar^2 k^2}{2m}
\]
- For discretized dislocations:
\[
E = \frac{\hbar \omega_B}{\alpha} \left\{ n + \frac{|l - \beta k|}{2\alpha} - \frac{(l - \beta k)}{2\alpha} + \frac{1}{2} \right\} + \frac{\hbar^2 k^2}{2m}
\]

### Conclusion:
This paper studies in detail the influence of different types of topological defects on Landau levels by geometric theory methods, and finds that these defects will significantly change the energy spectrum of electrons, and different defect types will lead to different degrees of degeneracy breaking.