Dynamic Fano Resonance of Quasienergy Excitons in Superlattices

Ren-Bao Liu,Bang-fen Zhu

DOI: https://doi.org/10.1088/0953-8984/12/50/103

2000-06-19

Abstract:The dynamic Fano resonance (DFR) between discrete quasienergy excitons and sidebands of their ionization continua is predicted and investigated in dc- and ac-driven semiconductor superlattices. This DFR, well controlled by the ac field, delocalizes the excitons and opens an intrinsic decay channel in nonlinear four-wave mixing signals.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: in semiconductor superlattices driven by direct current (dc) and alternating current (ac), predict and study the dynamic Fano resonance (DFR) between quasi - energy excitons and ionization continuous sidebands. Specifically, the author focuses on:

1. **Dynamic Fano Resonance (DFR)**:
- Study the coupling between quasi - energy exciton states and ionization continuous sidebands.
- Explore how this coupling leads to the dynamic ionization of excitons and opens an intrinsic attenuation channel in the nonlinear four - wave mixing signal.

2. **Changes in Quasi - Energy Spectra**:
- Analyze the interaction and evolution between discrete states and continuous bands in the quasi - energy spectra as the ac field intensity increases.
- Describe how discrete exciton states gradually merge into continuous bands and finally enter the ionization continuous region of adjacent sidebands.

3. **Changes in Absorption Spectra and FWM Signals**:
- Study the influence of DFR on absorption spectra, especially the phenomena manifested as asymmetric line shapes and broadening.
- Explore how DFR affects time - integrated four - wave mixing (TI - FWM) signals, including their exponential decay and quantum - beat phenomena.

4. **Localization Properties of Excitons**:
- By calculating the root - mean - square exciton radius \( W \) and the probability \( R_0 \) of electrons - holes at the same location, study the localization behavior of excitons at different delay times.
- Explore the dynamic ionization characteristics of excitons when DFR occurs.

5. **Theoretical Models and Numerical Simulations**:
- Use a one - dimensional tight - binding model to describe the dynamic behavior of the system.
- Solve the time - dependent Schrödinger equation to obtain the quasi - energy spectra, and calculate the quasi - energy \( \varepsilon_q \) by numerically diagonalizing the propagator \( U(T + t, t) \).
- Calculate absorption spectra and FWM signals to verify the validity of the theoretical model.

### Formula Summary

- **Fano Line - Shape Formula for Absorption Spectra**:
\[
\alpha(\Omega)=\alpha_0+\frac{\alpha_c(q\gamma+\Omega - E_x)^2}{\gamma^2+(\Omega - E_x)^2}
\]
where:
- \( \alpha_0 \) is the background constant,
- \( \alpha_c \) represents the continuous absorption without sideband coupling,
- \( q \) is the line - shape parameter,
- \( \gamma \) is related to resonance broadening,
- \( E_x \) is the position of the discrete state.

- **Fano Coupling Parameter \( \gamma \)**:
\[
\gamma=\pi|V_E|^2
\]
where \( V_E \) is the coupling matrix element between discrete and continuous states.

- **Line - Shape Parameter \( 1/q \)**:
\[
\frac{1}{q^2}=\left|\pi V_E\left(\frac{\mu_E}{\mu_X}\right)\right|^2
\]
where \( \mu_E \) and \( \mu_X \) are the optical transition matrix elements of continuous and discrete states respectively.

Through these studies, the author hopes to reveal new effects of DFR in semiconductor superlattices and provide theoretical guidance for experimental observations.