Muon Collider Physics at Very High Energies

M. S. Berger

DOI: https://doi.org/10.1063/1.1361666

2000-01-04

Abstract:Muon colliders might greatly extend the energy frontier of collider physics. One can contemplate circular colliders with center-of-mass energies in excess of 10 TeV. Some physics issues that might be relevant at such a machine are discussed.

High Energy Physics - Phenomenology

What problem does this paper attempt to address?

Modeling of nonequilibrium surface growth by a limited mobility model with distributed diffusion length

Thomas Martynec,Sabine H. L. Klapp

DOI: https://doi.org/10.1103/PhysRevE.100.033307

2019-08-28

Abstract:Kinetic Monte-Carlo (KMC) simulations are a well-established numerical tool to investigate the time-dependent surface morphology in molecular beam epitaxy (MBE) experiments. In parallel, simplified approaches such as limited mobility (LM) models characterized by a fixed diffusion length have been studied. Here, we investigate an extended LM model to gain deeper insight into the role of diffusional processes concerning the growth morphology. Our model is based on the stochastic transition rules of the Das Sarma-Tamborena (DT) model, but differs from the latter via a variable diffusion length. A first guess for this length can be extracted from the saturation value of the mean-squared displacement calculated from short KMC simulations. Comparing the resulting surface morphologies in the sub- and multilayer growth regime to those obtained from KMC simulations, we find deviations which can be cured by adding fluctuations to the diffusion length. This mimics the stochastic nature of particle diffusion on a substrate, an aspect which is usually neglected in LM models. We propose to add fluctuations to the diffusion length by choosing this quantity for each adsorbed particle from a Gaussian distribution, where the variance of the distribution serves as a fitting parameter. We show that the diffusional fluctuations have a huge impact on cluster properties during submonolayer growth as well as on the surface profile in the high coverage regime. The analysis of the surface morphologies on one- and two-dimensional substrates during sub- and multilayer growth shows that the LM model can produce structures that are indistinguishable to the ones from KMC simulations at arbitrary growth conditions.

Computational Physics,Statistical Mechanics
Layer by layer epitaxy in limited mobility nonequilibrium models of surface growth

P. Punyindu Chatraphorn,S. Das Sarma

DOI: https://doi.org/10.48550/arXiv.cond-mat/0203105

2002-03-06

Abstract:We study, using noise reduction techniques, layer by layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular beam epitaxy. Multiple hit noise reduction and long surface diffusion length lead to qualitatively similar layer by layer epitaxy in 1+1 and 2+1 dimensional limited mobility growth simulations. We discuss the dynamic scaling characteristics connecting the transient layer by layer growth regime with the asymptotic kinetically rough growth regime.

Statistical Mechanics,Materials Science
Layer-by-layer growth, apparent instability, and mound coarsening in thin film deposition controlled by thermally activated surface diffusion

Edwin Edgar Mozo Luis,Ismael S.S. Carrasco,Fábio D.A. Aarão Reis

DOI: https://doi.org/10.1016/j.mtcomm.2024.111122

IF: 3.8

2024-12-05

Materials Today Communications

Abstract:Thin film deposition from vapor with adsorbate diffusion and Ehrlich-Schwoebel (ES) barriers at step edges is studied by kinetic Monte Carlo (KMC) simulations and scaling approaches. Mound coarsening with slope selection is shown at the largest thicknesses, where roughness ( W ) and correlation length ( ξ ) scale in time with exponents β≈n≈0.25 , consistently with theoretical works but contrasting with previous simulations that systematically showed temperature-dependent exponents. At a given film thickness, we show that the mounded morphology is independent of the ES barrier, so that interlayer transport is suppressed, while the temperature increase of W and ξ is consistent with intralayer transport limited by adatom detachment from flat terrace borders. Initial layer-by-layer (LBL) growth occurs above a characteristic temperature that increases with the activation energies of terrace diffusion and of ES barrier, but weakly depends on the external flux. Subsequently, as the surface roughness is near the atom/molecule size, there is rapid roughening where, counterintuitively, larger effective growth exponents ( β>0.5 , suggesting unstable growth) are correlated with longer LBL regimes. Similar LBL-rough transitions were reported in organic film deposition and the model application to diindenoperylene films suggests a large ES barrier ∼0.4eV . In the mound coarsening regime, W/ξ and θ1/2/Wξ converge to constant values dependent on surface diffusion coefficients ( θ is the film thickness). This convergence suggests mound coarsening with slope selection in SnTe films whose effective β is anomalously large, showing how film morphology can be interpreted beyond exponent measurements.

materials science, multidisciplinary
POST 21st CENTURY STUDIES OF PROPERTIES AND DYNAMICS OF SURFACES DEVELOPED THROUGH DIFFERENT PURE AND COMPETITIVE GROWTH MODELS IN [math] AND [math] DIMENSIONS: A REVIEW

S. Z. NINORIA,D. BANERJEE

DOI: https://doi.org/10.1142/s0218625x24300168

2024-07-13

Surface Review and Letters

Abstract:Surface Review and Letters, Ahead of Print. With the advent of the semiconductor age and later the age of nanotechnology, the thin film and coating field have established their importance and reasons for doing in-depth studies. Different sophisticated physical techniques, like chemical vapor deposition, sputtering, evaporation, molecular beam epitaxy, etc., and the conventional spin coating or dip coating, have been employed to get thin films of specific materials/compounds. Of all these, physical techniques are particularly preferred for their ability to develop good quality thin film with high uniformity. In the field of experimental material science, there are tremendous efforts in thin film development and the study of their different properties. The properties include topological, electrical, electronic, optical, or other. At the same time, though less explored, there are developments of theoretical understanding regarding the basic mechanism of thin film growth by specific growth mechanism. In doing this, the basic mechanism of thin film growth has been categorized into different broad classes with specific features. The main features include the time dependence of interface width and values of different scaling exponents. Apart from these, studies also addressed different morphological, optical, or electrical properties of the as-grown thin films of specific material. This paper gathers the existing literature that reports the simulation-based theoretical studies related to thin film growth by different algorithms like random deposition, ballistic deposition, random deposition with surface relaxation, or their different combinations. Not only that, but the paper also summarizes different reports related to the simulation-based prediction of the material properties. As the topic is relatively new, the collection of reports added in the last 20 years has been considered. The paper has different sections. Section gives basic introductory ideas related to thin film development and its properties. Sections and , respectively, deal with the basics of different existing models and the basic steps involved in the simulation. Section gathers the related results reported by various researchers, followed by a short discussion and final concluding remarks. Undoubtedly, this paper is the first review work in this field and thus will serve as an invaluable source of information for future workers.

chemistry, physical,physics, condensed matter
Off-lattice Kinetic Monte Carlo simulations of strained heteroepitaxial growth

Michael Biehl,Florian Much,Christian Vey

DOI: https://doi.org/10.48550/arXiv.cond-mat/0405641

2004-05-27

Abstract:An off-lattice, continuous space Kinetic Monte Carlo (KMC) algorithm is discussed and applied in the investigation of strained heteroepitaxial crystal growth. As a starting point, we study a simplifying (1+1)-dimensional situation with inter-atomic interactions given by simple pair-potentials. The model exhibits the appearance of strain-induced misfit dislocations at a characteristic film thickness. In our simulations we observe a power law dependence of this critical thickness on the lattice misfit, which is in agreement with experimental results for semiconductor compounds. We furthermore investigate the emergence of strain induced multilayer islands or "Dots" upon an adsorbate wetting layer in the so-called Stranski-Krastanov (SK) growth mode. At a characteristic kinetic film thickness, a transition from monolayer to multilayer islands occurs. We discuss the microscopic causes of the SK-transition and its dependence on the model parameters, i.e. lattice misfit, growth rate, and substrate temperature.

Statistical Mechanics,Materials Science
Multiscale Kinetic Monte-Carlo for Simulating Epitaxial Growth

J. P. DeVita,L. M. Sander,P. Smereka

DOI: https://doi.org/10.1103/PhysRevB.72.205421

2005-09-01

Abstract:We present a fast Monte-Carlo algorithm for simulating epitaxial surface growth, based on the continuous-time Monte-Carlo algorithm of Bortz, Kalos and Lebowitz. When simulating realistic growth regimes, much computational time is consumed by the relatively fast dynamics of the adatoms. Continuum and continuum-discrete hybrid methods have been developed to approach this issue; however in many situations, the density of adatoms is too low to efficiently and accurately simulate as a continuum. To solve the problem of fast adatom dynamics, we allow adatoms to take larger steps, effectively reducing the number of transitions required. We achieve nearly a factor of ten speed up, for growth at moderate temperatures and large D/F.

Materials Science
Kinetic Monte Carlo Simulation of Strained Heteroepitaxial Growth with Intermixing

Arvind Baskaran,Jason Devita,Peter Smereka

DOI: https://doi.org/10.1007/s00161-009-0118-0

2009-03-28

Abstract:An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are incorporated using a ball and spring model. While idealized, this model nevertheless captures many aspects of heteroepitaxial growth, including nucleation, surface diffusion, and long range effects due elastic interaction. The algorithm combines a fast evaluation of the elastic displacement field with an efficient implementation of a rejection-reduced kinetic Monte Carlo based on using upper bounds for the rates. The former is achieved by using a multigrid method for global updates of the displacement field and an expanding box method for local updates. The simulations show the importance of intermixing on the growth of a strained film. Further the method is used to simulate the growth of self-assembled stacked quantum dots.

Materials Science
"Electronic Growth" of Metallic Overlayers on Semiconductor Substrates

Zy Zhang,Q Niu,Ck Shih

DOI: https://doi.org/10.1103/physrevlett.80.5381

IF: 8.6

1998-01-01

Physical Review Letters

Abstract:We present a novel "electronic growth" model for metallic thin films on semiconductor substrates. Depending on the competition between the effects of quantum confinement, charge spilling, and interface-induced Friedel oscillations, different types of film stability are defined, as characterized by the existence of critical/magic thicknesses for smooth growth. In particular, smooth growth can be achieved only above a few monolayers for noble metals, and only for the first layer for alkali metals.
Kinetic Monte Carlo Simulation of Film Morphologies at the Initial Stages

Zheng XiaoPing,Zhang PeiFeng,He DeYan,Li Lian

DOI: https://doi.org/10.1007/s11433-007-0011-4

2008-01-01

Abstract:The morphologies at the initial stages of thin film growth were studied by using Kinetic Monte Carlo techniques. A more efficient model was used to calculate the activity energy. The model involves incident atom attachment, diffusion, detachment from the surface, detached atom returning, and dimer diffusion. We edited a set of software of the model and simulated the surface morphologies by the principle of computer graphics. It is shown that the nucleuses formed at the initial stages and the surface morphologies at high temperatures are very different from those at low temperatures. The later surface growth depends on the nucleuses at the initial stages. The mechanism results from the atom thermal movement, the temperature determines the diffusion ability, and the deposition rate determines the diffusion time.
A discrete model for layered growth

Davide Renzi,Sonia Marfia,Giuseppe Tomassetti,Giuseppe Zurlo

DOI: https://doi.org/10.1016/j.euromechsol.2024.105232

IF: 4.873

2024-01-07

European Journal of Mechanics - A/Solids

Abstract:We present a discrete model that captures the fundamental properties of layered deposition in a minimal setting. The model is based on simplified kinematics and allows for the onset of incompatible deformations between discrete layers of a growing stack. Thanks to the discrete nature of the model, we obtain an averaged formulation of mechanical equilibrium for the growing stack, leading to closed-form solutions that are both analytically simple and physically transparent. In particular, we are able to explain the origin of residual stress by the accumulation of incompatible deformations between adjacent layers. The model can also be regarded as an elementary approximation of additive manufacturing. Within this context, we are able to formulate the technologically relevant inverse problem that provides the deposition protocol required to produce a desired state of internal stress in an additively-manufactured stack. Another important aspect analyzed in the work is the role played by an ideal "glue" between the layers, whose presence is fundamental to prevent their sliding and whose mechanical behavior can quantitatively influence the final stress distribution in the stack. The simplicity of the model makes it possible to highlight how the controls exerted during deposition will have qualitative or quantitative effects on the final stress state of the stack.

mechanics
Modeling epitaxial film growth of C$_{60}$ revisited

William Janke,Thomas Speck

DOI: https://doi.org/10.1103/PhysRevB.101.125427

2020-03-04

Abstract:Epitaxial films evolve on time and length scales that are inaccessible to atomistic computer simulation methods like molecular dynamics (MD). To numerically predict properties for such systems, a common strategy is to employ kinetic Monte Carlo (KMC) simulations, for which one needs to know the transition rates of the involved elementary steps. The main challenge is thus to formulate a consistent model for the set of transition rates and to determine its parameters. Here we revisit a well-studied model system, the epitaxial film growth of the fullerene C$_{60}$ on an ordered C$_{60}$ substrate(111). We implement a systematic multiscale approach in which we determine transition rates through MD simulations of specifically designed initial configurations. These rates follow Arrhenius' law, from which we extract energy barriers and attempt rates. We discuss the issue of detailed balance for the resulting rates. Finally, we study the morphology of subatomic and multilayer film growth and compare simulation results to experiments. Our model enables further studies on multi-layer growth processes of C$_{60}$ on other substrates.

Materials Science,Mesoscale and Nanoscale Physics,Computational Physics
Kinetic Monte Carlo Simulation of Thin Film Growth

Peifeng Zhang,Xiaoping Zheng,Deyan He

DOI: https://doi.org/10.1360/03yw0069

IF: 3.572

2010-01-01

Computational Materials Science

Abstract:A novel model consisting of basic micro-processes has been developed on the basis of the classic diffusion theory. It is first time that the concept of exchange rate has introduced, and the growing process of surfactant-mediated epitaxial thin-film growth has been simulated with Kinetic Monte Carlo (KMC) technique. The results of simulation found that the exchange reaction of RLA model is a combination of the basic micro-processes. The majorities of exchange are not complete position exchange and the exchange rate doesn't always equal one. Both surfactant atoms and adatoms would diffuse from one layer to another. The diffusion happens mostly between single atoms and the diffusing atoms increase with substrate temperature.
Kinetic Monte Carlo Simulations of dislocations in heteroepitaxial growth

F. Much,M. Ahr,M. Biehl,W. Kinzel

DOI: https://doi.org/10.48550/arXiv.cond-mat/0106435

2001-06-21

Abstract:We determine the critical layer thickness for the appearance of misfit dislocations as a function of the misfit between the lattice constants of the substrate and the adsorbate from Kinetic Monte Carlo (KMC) simulations of heteroepitaxial growth. To this end, an algorithm is introduced which allows the off-lattice simulation of various phenomena observed in heteroepitaxial growth including critical layer thickness for the appearance of misfit dislocations, or self-assembled island formation. The only parameters of the model are deposition flux, temperature and a pairwise interaction potential between the particles of the system. Our results are compared with a theoretical treatment of the problem and show good agreement with a simple power law.

Materials Science
Kinetic Roughening in Growth Models with Diffusion in Higher Dimensions

P. Šmilauer,M. Kotrla

DOI: https://doi.org/10.1209/0295-5075/27/4/002

1994-07-19

Abstract:We present results of numerical simulations of kinetic roughening for a growth model with surface diffusion (the Wolf-Villain model) in 3+1 and 4+1~dimensions using lattices of a linear size up to $L=64$ in 3+1~D and $L=32$ in 4+1~D. The effective exponents calculated both from the surface width and from the height--height correlation function are much larger than those expected based on results in lower dimensions, due to a growth instability which leads to the evolution of large mounded structures on the surface. An increase of the range for incorporation of a freshly deposited particle leads to a decrease of the roughness but does not suppress the instability.

Condensed Matter
Lattice gas models and Kinetic Monte Carlo simulations of epitaxial growth

Michael Biehl

DOI: https://doi.org/10.48550/arXiv.cond-mat/0406707

2004-06-29

Abstract:A brief introduction is given to Kinetic Monte Carlo (KMC) simulations of epitaxial crystal growth. Molecular Beam Epitaxy (MBE) serves as the prototype example for growth far from equilibrium. However, many of the aspects discussed hear would carry over to other techniques as well. A variety of approaches to the modeling and simulation of epitaxial growth has been applied. They range from the detailed quantum mechanics treatment of microscopic processes to the coarse grained picture in terms of stochastic differential equations or other continuum approaches. Here, the focus is on discrete representations such as lattice gas and Solid-On-Solid (SOS) models. The basic ideas of the corresponding KMC methods are presented. Strengths and weaknesses become apparent in the discussion of several levels of simplification that are possible in this context.

Materials Science,Statistical Mechanics
Crossover from compact to branched films in electrodeposition with surface diffusion

F. D. A. Aarão Reis,Dung di Caprio,Abdelhafed Taleb

DOI: https://doi.org/10.48550/arXiv.1903.01009

2019-03-03

Materials Science

Abstract:We study a model for thin film electrodeposition in which instability development by preferential adsorption and reduction of cations at surface peaks competes with surface relaxation by diffusion of the adsorbates. The model considers cations moving in a supported electrolyte, adsorption and reduction when they reach the film surface, and consequent production of mobile particles that execute activated surface diffusion, which is represented by a sequence of random hops to neighboring lattice sites with a maximum of G hop attempts (G>>1), a detachment probability epsilon<1 per neighboring particle, and a no-desorption condition. Computer simulations show the formation of a compact wetting layer followed by the growth of branched deposits. The maximal thickness z_c of that layer increases with G, but is weakly affected by epsilon. A scaling approach describes the crossover from smooth film growth to unstable growth and predicts z_c ~ G^gamma, with gamma = 1/[2(1-nu)] = 0.43, where nu=0.30 is the inverse of the dynamical exponent of the Villain-Lai-Das Sarma equation that describes the initial roughening. Using previous results for related deposition models, the thickness z_c can be predicted as a function of an activation energy for terrace surface diffusion and the temperature, and the small effects of the parameter epsilon are justified. These predictions are confirmed by the numerical results with good accuracy. We discuss possible applications, with a particular focus on the growth of multifuncional structures with stacking layers of different porosity.
A Computer Simulation of Nucleation and Growth of Thin Films

Zheng Xiaoping,Zhang Peifeng,He Deyan,Liu Jun,Ma Jiantai

DOI: https://doi.org/10.1360/03yw0220

IF: 3.572

2004-01-01

Computational Materials Science

Abstract:A three-dimensional kinetic Monte Carlo technique has been developed for simulating the nucleation and growth of thin films. This model involves incident atom attachment, surface diffusion of the atoms on the growing surface and atom detachment from the growing surface. It takes some new effects into account, such as a significant improvement in calculation of activation energy for the atom diffusion, which renders the model more reasonable. In addition three optimum temperatures and the consistency of their dependence on deposition rate have been found out; the dependence of the surface roughness and relative density on the deposition rate has been discussed; and the approximation of freezing neighbour atoms and periodic boundary conditions has been applied.
Coupling Kinetic Monte-Carlo And Continuum Models With Application To Epitaxial Growth

Tp Schulze,P Smereka,E Weinan

DOI: https://doi.org/10.1016/S0021-9991(03)00208-0

IF: 4.645

2003-01-01

Journal of Computational Physics

Abstract:We present a hybrid method for simulating epitaxial growth that combines kinetic Monte-Carlo (KMC) simulations with the Burton-Cabrera-Frank model for crystal growth. This involves partitioning the computational domain into KMC regions and regions where we time-step a discretized diffusion equation. Computational speed and accuracy are discussed. We find that the method is significantly faster than KMC while accounting for stochastic fluctuations in a comparable way. (C) 2003 Elsevier Science B.V. All rights reserved.
Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever

Joachim Jacobsen,James P. Sethna

DOI: https://doi.org/10.1016/S0039-6028%2898%2900477-4

1997-12-16

Abstract:The homoepitaxial growth of initially flat surfaces has so far always led to surfaces which become rougher and rougher as the number of layers increases: even in systems exhibiting ``layer by layer'' growth the registry of the layers is gradually lost. We propose that pulsed glancing-angle sputtering, once per monolayer, can in principle lead to layer-by-layer growth that continues indefinitely, if one additional parameter is controlled. We illustrate our suggestion with a fairly realistic simulation of the growth of a Pt (111) surface, coupled with a simplified model for the sputtering process.

Materials Science,Statistical Mechanics

Muon Collider Physics at Very High Energies

Modeling of nonequilibrium surface growth by a limited mobility model with distributed diffusion length

Layer by layer epitaxy in limited mobility nonequilibrium models of surface growth

Layer-by-layer growth, apparent instability, and mound coarsening in thin film deposition controlled by thermally activated surface diffusion

POST 21st CENTURY STUDIES OF PROPERTIES AND DYNAMICS OF SURFACES DEVELOPED THROUGH DIFFERENT PURE AND COMPETITIVE GROWTH MODELS IN [math] AND [math] DIMENSIONS: A REVIEW

Off-lattice Kinetic Monte Carlo simulations of strained heteroepitaxial growth

Multiscale Kinetic Monte-Carlo for Simulating Epitaxial Growth

Kinetic Monte Carlo Simulation of Strained Heteroepitaxial Growth with Intermixing

"Electronic Growth" of Metallic Overlayers on Semiconductor Substrates

Kinetic Monte Carlo Simulation of Film Morphologies at the Initial Stages

A discrete model for layered growth

Modeling epitaxial film growth of C$_{60}$ revisited

Kinetic Monte Carlo Simulation of Thin Film Growth

Kinetic Monte Carlo Simulations of dislocations in heteroepitaxial growth

Kinetic Roughening in Growth Models with Diffusion in Higher Dimensions

Lattice gas models and Kinetic Monte Carlo simulations of epitaxial growth

Crossover from compact to branched films in electrodeposition with surface diffusion

A Computer Simulation of Nucleation and Growth of Thin Films

Coupling Kinetic Monte-Carlo And Continuum Models With Application To Epitaxial Growth

Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever