A 46μm AlGsAs/GaAs terahertz quantum-well infrared photodetector

Xi-hui Liu,Kai Liao,Xiaohao Zhou,Zhifeng Li,Ning Li
DOI: https://doi.org/10.1117/12.2034762
2013-08-23
Abstract:Recently infrared photodetectors have attracted much attention due to their potential use in infrared imaging, optical communications, medical detection and many other fields. In this letter, we report a THz quantum well infrared detector based on AlGaAs/GaAs material system. Structure with 4% Al content in the barrier was grown using molecular beam epitaxy (MBE). The photocurrent spectra were measured at 4.3 K with a Fourier transforming infrared spectrometer using a solid substrate far-IR beam splitter and the peak response wavelength at 46 μm was observed, close to the theoretical calculated results. The dark currents for the THz QWIP detector have been measured at different temperatures. It was found that there is a huge discontinuity in the current. We analyzed this phenomenon and believed the discontinuity in the current was caused by intersubband impact ionization of the first quantum well.
Engineering
What problem does this paper attempt to address?