Recovering modular forms and representations from tensor and symmetric powers

C. S. Rajan
2004-10-18
Abstract: We consider the problem of determining the relationship between two representations knowing that some tensor or symmetric power of the original represetations coincide. Combined with refinements of strong multiplicity one, we show that if the characters of some tensor or symmetric powers of two absolutely irreducible $l$-adic representation with the algebraic envelope of the image being connected, agree at the Frobenius elements corresponding to a set of places of positive upper density, then the representations are twists of each other by a finite order character.
Number Theory
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: to study the influence of charged fullerenes encapsulated in carbon nanotubes on the electronic states of carbon nanotubes, especially how these charged fullerenes locally change the density of electronic states in nanotubes and lead to the formation of localized electronic states. Specifically, the paper explores the following aspects: 1. **Modulation of the electronic states of carbon nanotubes by charged fullerenes**: The charged fullerenes encapsulated inside the carbon nanotubes will generate electrostatic interactions, which can be sensed by the electrons in the carbon nanotubes. When this interaction appears as an attractive potential, a localized electronic state will be formed near the fullerene. 2. **Formation of localized electronic states**: Due to the attractive potential generated by the charged fullerenes, localized electronic states will be formed in the carbon nanotubes. The spatial extension and the number of these localized electronic states can be estimated in the form of potential energy. Through a one - dimensional low - energy model, the bound states formed by the Coulomb potential within the band gap can be determined. 3. **Effective narrowing of the band gap of semiconductor nanotubes**: The presence of charged fullerenes effectively narrows the band gap of semiconductor nanotubes near the position of fullerenes. The experimentally observed phenomenon of spatial modulation of the band gap (such as narrowing from 0.43 eV to 0.17 eV) can be explained by this mechanism. 4. **Shielding effect of the Coulomb potential**: The paper also discusses the shielding effect of the Coulomb potential inside the carbon nanotubes. Since there is a band gap at the Fermi level in semiconductor nanotubes, the shielding effect is not complete, so the Coulomb potential still maintains its characteristics over long distances. After dealing with the shielding effect by the bosonization method, it is found that the localized electronic states caused by charged fullerenes still exist. 5. **Consistency of experimental results**: The research results show that the Coulomb interaction is crucial for explaining the phenomenon of spatial modulation of the band gap in the fullerene - nanotube hybrid structure. In particular, the phenomenon of band gap narrowing has been observed in samples containing metal fullerenes, while this phenomenon has not been observed in samples encapsulating C60 molecules. This is consistent with the theoretical analysis that charged fullerenes can significantly affect the electronic structure of nanotubes. ### Summary This paper aims to reveal the changes in electronic states caused by charged fullerenes inside carbon nanotubes through theoretical calculations and model analysis, especially the formation of localized electronic states and their influence on the band gap. These studies provide an important theoretical basis for understanding the electronic properties of fullerene - nanotube hybrid structures and offer the possibility of further regulating the band gap of nanotube devices.