A Multi-bit CAM Design with Ultra-high Density and Energy Efficiency Based on FeFET NAND

Chengji Jin,Jiacheng Xu,Jiayi Zhao,Jiani Gu,Jiajia Chen,Huan Liu,Haoji Qian,Miaomiao Zhang,Bing Chen,Ran Cheng,Yan Liu,Xiao Yu,Genquan Han
DOI: https://doi.org/10.1109/led.2023.3277845
IF: 4.8157
2023-01-01
IEEE Electron Device Letters
Abstract:We have proposed and experimentally demonstrated a novel multi-bit content addressable memory (CAM) cell based on two series connected ferroelectric FETs (FeFETs). Thanks to the multilevel cell (MLC) operations of FeFETs and complementary inputs of search lines (SLs), CAM functions with 2-bits/cell are realized. Bit density can be further boosted by implementing more stable states of FeFETs. In addition, the CAM cells can be integrated in a form of 3D vertical FeFET NAND, which enables ultra-high density and energy efficiency at low cost. A 4×4 FeFET NAND array is fabricated, and parallel search of a query with 4-bits data in a whole NAND block is experimentally demonstrated. The proposed CAM design is promising for future data-centric computing systems.
engineering, electrical & electronic
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