Facile and Eco-Friendly Fabrication Route of In2O3NP/MWCNTs Heterostructure as High-Performance Photodetectors by Laser Ablation Method

Khawla S. Khashan,Aseel A. Hadi,Hawraa M. Abdul-Redaa
DOI: https://doi.org/10.1007/s11468-024-02524-w
IF: 2.726
2024-09-15
Plasmonics
Abstract:Colloidal In 2 O 3 NPs-MWCNTs heterostructure (NPs) were successfully synthesized by a facile one-step Q-switched Nd: YAG laser ablation of indium target in CNTs suspension at room temperature. Raman spectroscopy and optical absorption analysis of the prepared samples confirmed the formation of In 2 O 3 NPs-MWCNTs heterostructure. Transmission electron microscope (TEM) investigation of In 2 O 3 -CNTs structure and pure In 2 O 3 nanoparticles revealed the formation of spherical nanoparticles with average size of 66 nm and 19 nm, respectively. The heterojunction photodetectors were fabricated by drop casting of colloidal In 2 O 3 NPs-MWCNTs NPs onto a single crystal silicon wafer. I–V characteristics of the In 2 O 3 NPs/Si and In 2 O 3 NPs-MWCNTs/Si heterojunctions under both dark and light conditions revealed rectifying properties and good photo-response. The built-in voltage was determined from the C–V measurements which revealed an abrupt junction and their values of 1.05 V and 0.59 V for In 2 O 3 NPs-MWCNTs/Si and In 2 O 3 NPs/Si, respectively. In 2 O 3 NPs-MWCNTs/Si photodetector demonstrated the highest responsivity and quantum efficiency of 1.3 A/W and 3.5 × 10 2 % at 450 nm, respectively. This In 2 O 3 -MWCNTs heterostructure-based photodetector with improved performance may open the door to effective Vis–NIR photodetection applications.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry, physical
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