Abstract:Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a separate theoretical description. In this work, we theoretically study the electrical control and coherence properties of silicon hole dots with different magnetic field orientations. We discuss possible experimental configurations to optimize the electric dipole spin resonance (EDSR) Rabi time, the phonon relaxation time, and the dephasing due to random telegraph noise. Our main findings are: (i) The in-plane $g$-factor is strongly influenced by the presence of the split-off band, as well as by any shear strain. The $g$-factor is a non-monotonic function of the top gate electric field, in agreement with recent experiments. This enables coherence sweet spots at specific values of the top gate field and specific magnetic field orientations. (ii) Even a small ellipticity (aspect ratios $\sim 1.2$) causes significant anisotropy in the in-plane $g$-factor, which can vary by $50\% - 100\%$ as the magnetic field is rotated in the plane. (iii) EDSR Rabi frequencies are comparable to Ge, and the ratio between the relaxation time and the EDSR Rabi time $\sim 10^5$. For an out-of-plane magnetic field the EDSR Rabi frequency is anisotropic with respect to the orientation of the driving electric field, varying by $\approx 20\%$ as the driving field is rotated in the plane. Our work aims to stimulate experiments by providing guidelines on optimizing configurations and geometries to achieve robust, fast and long-lived hole spin qubits in silicon.

Flopping-mode spin qubit in a Si-MOS quantum dot

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

An Operation Guide of Si-MOS Quantum Dots for Spin Qubits

Controlling a Nanowire Spin-Orbit Qubit Via Electric-Dipole Spin Resonance

Electric field dependence of spin qubit in a Si-MOS quantum dot

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Longitudinal coupling between electrically driven spin-qubits and a resonator

Dynamic sweet spot of driven flopping-mode spin qubits in planar quantum dots

A singlet-triplet hole-spin qubit in MOS silicon

Baseband control of single-electron silicon spin qubits in two dimensions

Controllable single spin evolution at sub-harmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-St{ü}ckelberg-Majorana interference

Fast high-fidelity spin readout in the singlet-triplet basis using a resonator and tailored pulses

Coherent electron transport in silicon quantum dots

Spin shuttling in a silicon double quantum dot

Non-symmetric Pauli spin blockade in a silicon double quantum dot

Driven coherent oscillations of a single electron spin in a quantum dot

Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Coherently controlling robust spin-orbit qubits of electrons in nanowire quantum dots