Identifying suitable substrates for high-quality graphene-based heterostructures

L Banszerus,H Janssen,M Otto,A Epping,T Taniguchi,K Watanabe,B Beschoten,D Neumaier,C Stampfer
DOI: https://doi.org/10.1088/2053-1583/aa5b0f
IF: 6.861
2017-02-08
2D Materials
Abstract:We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
materials science, multidisciplinary
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