The role of vacancy in alloyed (001)-Al//(001) interface

Xiangkai Chen,Xiaohua Chen,Zidong Wang,Kaixuan Chen,Yanlin Wang
DOI: https://doi.org/10.1016/j.mtcomm.2022.105260
IF: 3.8
2023-03-01
Materials Today Communications
Abstract:The effects of a vacancy on the chemical bonding strength of the (001) α-Al//(001) θ' interface were systematically investigated by using the first-principles calculations. The migration energy barrier of a single vacancy around the Sc/Zr/Cd was calculated to assess the hindering effect of the Sc/Zr/Cd on the vacancy migration. Results suggest that a vacancy enhances the chemical bonding strength of the Sc/Zr-alloyed interface, which is attributed to the high electron localization level between Sc/Zr and its nearest-neighbor host atom Al at atomic layer 2 and between Al atoms at atomic layer 1 and significant charge accumulation in the interface. The introduction of a vacancy will weaken the magnitude of the chemical bonding strength reduction of Cd-alloyed interface, which is ascribed to the large electron localization level between Al atoms at atomic layer 1 and significant charge accumulation in the interface. The migration energy barrier of a vacancy around Sc/Zr/Cd at the Sc/Zr/Cd-alloyed interface is much larger than those around Al at the pure interface, indicating that Sc/Zr/Cd has a hindering effect on the vacancy. Although Cd shows a detrimental effect on the chemical bonding strength of the interface, it has a strengthening effect by hindering the vacancy migration.
materials science, multidisciplinary
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