Band-Edge Orbital Engineering of Perovskite Semiconductors for Optoelectronic Applications

Gang Tang,Philippe Ghosez,Jiawang Hong
DOI: https://doi.org/10.1021/acs.jpclett.0c03816
IF: 6.888
2021-04-26
The Journal of Physical Chemistry Letters
Abstract:Lead (Pb) halide perovskites have achieved great success in recent years because of their excellent optoelectronic properties, which is largely attributed to the lone-pair <i>s</i> orbital-derived antibonding states at the valence band edge. Guided by the key band-edge orbital character, a series of <i>ns</i><sup>2</sup>-containing (i.e., Sn<sup>2+</sup>, Sb<sup>3+</sup>, and Bi<sup>3+</sup>) Pb-free perovskite alternatives have been explored as potential photovoltaic candidates. On the other hand, based on the band-edge orbital components (i.e., M<sup>2+</sup><i>s</i> and <i>p</i>/X<sup>–</sup><i>p</i> orbitals), a series of strategies have been proposed to optimize their optoelectronic properties by modifying the atomic orbitals and orbital interactions. Therefore, understanding the band-edge electronic features from the recently reported halide perovskites is essential for future material design and device optimization. This Perspective first attempts to establish the band-edge orbital–property relationship using a chemically intuitive approach and then rationalizes their superior properties and explains the trends in electronic properties. We hope that this Perspective will provide atomic-level guidance and insights toward the rational design of perovskite semiconductors with outstanding optoelectronic properties.This article has not yet been cited by other publications.
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