Abstract:Stanene possesses excellent properties, including an extremely high charge carrier density, massless Dirac fermions, and high thermal conductivity. Moreover, it exhibits band inversion phenomena, being made a candidate for a topological insulator. Topological insulators can generate dissipationless electric currents under certain conditions, showing great application potentials. However, the presence of a Dirac cone in the band structure of stanene at the high-symmetry point K in the Brillouin zone, resulting in a zero band gap, significantly limits its applications in the semiconductor field. This study adopts the method of doping B/N elements in stanene and applying an electric field perpendicular to the stanene to open the band gap at the K point. The effects of doping and the intensity of the applied electric field on the structural and electronic properties of stanene are investigated. The results reveal that both doping B elements and applying a vertical electric field can open the band gap at the K point while preserving the topological properties of stanene. Additionally, there is a positive correlation between the applied vertical electric field intensity and the band gap at the K point. Simultaneously doping B elements and applying a vertical electric field can increase the band gap at the K point, reaching 0.092 eV when the electric field intensity is 0.5 V/Å. After doping N elements, stanene is transformed into an indirect band gap semiconductor with a band gap of 0.183 eV. Applying a vertical electric field cannot change the structure of N-doped stanene, and the intensity of the applied vertical electric field is negatively correlated with the band gap at the K point. When the electric field intensity is 0.5 V/Å, the band gap at the K point decreases to 0.153 eV.

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