Abstract:Improving inorganic optoelectronic technologies depends on understanding materials' electronic properties, especially the bandgap. Traditional methods like DFT calculations face limitations, prompting the development of machine learning models. This study integrates experimental data with structural features, yielding enhanced bandgap predictions. This approach offers a promising, efficient alternative for accelerating optoelectronic technology development. A pivotal challenge in advancing inorganics optoelectronic technologies, is the precise characterization of materials' electronic attributes, with the bandgap being a critical property. Conventional approaches, heavily reliant on time‐intensive and financially demanding experimental and computational methods, such as density functional theory (DFT) calculations, face limitations due to inherent estimation errors. Machine learning methodologies are developed for the prediction of bandgaps of inorganic semiconductors but most of them are employed for datasets created by DFT calculations, hence limiting their performance. Addressing this, the study leverages machine learning methodologies, harnessing both compositional and structural features, to predict the band gaps of inorganic semiconductors with enhanced accuracy. This advancement is reinforced by the employment of an experimental bandgap dataset, which, when integrated with structural descriptors obtained from the Materials Project, significantly improves prediction capabilities. This is evidenced by the model's exceptional performance across two distinct benchmark datasets. Furthermore, the model's adeptness in predicting formation energies underscores its versatility and applicability to a broad spectrum of electronic properties. These findings suggest that the predictive accuracy of this model can be further augmented through the inclusion of additional experimental bandgap measurements and the refinement of structural descriptors. This approach offers a promising and efficient alternative to traditional methodologies, potentially accelerating the development of optoelectronic technologies.

Enhancing predictions of experimental band gap using machine learning and knowledge transfer

Accurate Band Gap Prediction Based on an Interpretable Δ-machine Learning

Predicting the band gap of binary compounds from machine-learning regression methods

Composition and Structure Based GGA Bandgap Prediction Using Machine Learning Approach

Estimation of Electronic Band Gap Energy From Material Properties Using Machine Learning

Accurate prediction of semiconductor bandgaps based on machine learning and prediction of bandgaps for two-dimensional heterojunctions

Prediction model of band gap for inorganic compounds by combination of density functional theory calculations and machine learning techniques

Automatic Prediction of Band Gaps of Inorganic Materials Using a Gradient Boosted and Statistical Feature Selection Workflow

Machine-Learning Prediction of the Computed Band Gaps of Double Perovskite Materials

Enhancing materials property prediction by leveraging computational and experimental data using deep transfer learning

Addressing the Band Gap Problem with a Machine-Learned Exchange Functional

Training Machine-Learned Density Functionals on Band Gaps

Bandgap prediction of two-dimensional materials using machine learning

Prediction model of band-gap for AX binary compounds by combination of density functional theory calculations and machine learning techniques

Machine Learning‐Enhanced Prediction of Inorganic Semiconductor Bandgaps for Advancing Optoelectronic Technologies

A Statistical Learning Framework for Accelerated Bandgap Prediction of Inorganic Compounds

Accurate Prediction of Experimental Band Gaps from Large Language Model-Based Data Extraction

Accurate prediction of dielectric properties and bandgaps in materials with a machine learning approach

Predicting the Electronic and Structural Properties of Two-Dimensional Materials Using Machine Learning

A Domain Knowledge Enhanced Machine Learning Method to Predict the Properties of Halide Double Perovskite A2B+B3+X6