Thermal expansion coefficient of few-layer MoS2 studied by temperature-dependent Raman spectroscopy

Zhongtao Lin,Wuguo Liu,Shibing Tian,Ke Zhu,Yuan Huang,Yang Yang
DOI: https://doi.org/10.1038/s41598-021-86479-6
IF: 4.6
2021-03-29
Scientific Reports
Abstract:Abstract The thermal expansion coefficient is an important thermal parameter that influences the performance of nanodevices based on two-dimensional materials. To obtain the thermal expansion coefficient of few-layer MoS 2 , suspended MoS 2 and supported MoS 2 were systematically investigated using Raman spectroscopy in the temperature range from 77 to 557 K. The temperature-dependent evolution of the Raman frequency shift for suspended MoS 2 exhibited prominent differences from that for supported MoS 2 , obviously demonstrating the effect due to the thermal expansion coefficient mismatch between MoS 2 and the substrate. The intrinsic thermal expansion coefficients of MoS 2 with different numbers of layers were calculated. Interestingly, negative thermal expansion coefficients were obtained below 175 K, which was attributed to the bending vibrations in the MoS 2 layer during cooling. Our results demonstrate that Raman spectroscopy is a feasible tool for investigating the thermal properties of few-layer MoS 2 and will provide useful information for its further application in photoelectronic devices.
multidisciplinary sciences
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