Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd 3 As 2 grown on Si

Wei-Chen Lin,Peng-Ying Tsai,Jia-Zhu Zou,Jie-Ying Lee,Chun-Wei Kuo,Hsin-Hsuan Lee,Ching-Yang Pan,Cheng-Hsueh Yang,Sheng-Zong Chen,Jyh-Shyang Wang,Pei-hsun Jiang,Chi-Te Liang,Chiashain Chuang
DOI: https://doi.org/10.1088/1361-6528/ad1941
IF: 3.5
2023-12-28
Nanotechnology
Abstract:Abstract Preparing Cd 3 As 2 , which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd 3 As 2 films grown on Si showing the chiral anomaly. Here, for the first time, we report the novel preparation and fabrication of a Cd 3 As 2 (112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry’s phase of π. Despite the Hall carrier density (n 3D ≈9.42×10 17 cm -3 ) of our Cd 3 As 2 film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd 3 As 2 film. Our tailoring growth of Cd 3 As 2 on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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