Enhanced Limit-of-Detection of Current Sensor Based on Tunneling Magnetoresistive Effect With Multichips Differential Design
Jiaming Liu,Mengmeng Guan,Yiwei Xu,Shuang Zhao,Wei Su,Cuiling Zhang,Zhiguang Wang,Xiaohui Zhang,Zhongqiang Hu,Zhuangde Jiang,Ming Liu
DOI: https://doi.org/10.1109/tim.2023.3322494
IF: 5.6
2023-10-28
IEEE Transactions on Instrumentation and Measurement
Abstract:Accurately measuring weak electric currents in the order of microamperes in a noninvasive manner is crucial yet challenging for industrial electronics. In this work, we first fabricated low-noise magnetic field sensor chips based on the tunneling magnetoresistive (TMR) effect. A composite free layer and a three-step annealing process were used to improve the performance, resulting in a sensitivity of 30 V/V/T (3 mV/V/Oe), nonlinearity below 0.5%, and reduction of the noise density from /V/ Hz to /V/ Hz at 1 Hz, in comparison with the traditional two-step annealing process. We then developed a weak-current sensing module with a differential design using two TMR sensor chips arranged antiparallelly. Equipped with a magnetic flux concentration structure and a low-noise signal processing circuit, we demonstrated transient measurement of weak current well below 1 mA with a wide bandwidth of dc-to-16 kHz, a dynamic range of ±150 mA (51 dB), and a rapid response time of . The limit-of-detection (LoD) of the sensing module for dc and ac current reached 800 and (rms), respectively, which is about 30% lower than the single-chip design. This weak-current sensor based on differential TMR has the potential to be useful for industrial applications in smart grids and green energy.
engineering, electrical & electronic,instruments & instrumentation