Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Amplified Local Strain Signal in Strain-Plasmonic Coupled van der Waals Heterostructures

Strain‐Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS 2

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

Strain-tuned light trapping performance of plasmonic solar cells

Strong coupling of a plasmonic nanoparticle to a semiconductor nanowire

A strain sensor based on spoof localized surface plasmons for measuring material strain

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Strain Engineering in Monolayer WS2 and WS2 Nanocomposites

Probing Local Strain at Mx2-Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering

Unveiling strain-enhanced moiré exciton localization in twisted van der Waals homostructures

Large-Scale Manipulation of Monolayer MoS 2 Photoluminescence via Size-Tunable Plasmonic Nanoparticles: Implications for Information Encoding and Optical Anti-Counterfeiting

Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS2 by Circularly Polarized Light

Generation and Detection of Strain-Localized Excitons in WS 2 Monolayer by Plasmonic Metal Nanocrystals

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

The Effect of the Pre-Strain Process on the Strain Engineering of Two-Dimensional Materials and Their van der Waals Heterostructures

Strain Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2

Surface Plasmon Polariton–enhanced Photoluminescence of Monolayer MoS2 on Suspended Periodic Metallic Structures