Fabrication of CsPbBr3 Perovskite Solar Cells with N-Butanol Additives
Songzhi Zheng,Hao Li,Zeyuan Wang,Yang Wang,Cong Yin,Xuanheng Chen,Wenhao Zhu,Weihai Sun
DOI: https://doi.org/10.1360/tb-2024-0277
2024-01-01
Abstract:Perovskite solar cells (PSCs) have garnered notable attention in the photovoltaic field for their cost-effectiveness, simple fabrication, and high power conversion efficiency (PCE). Since the inception of the first PSC in 2009, significant advancements have been made, with the PCE soaring from 3.8% to 26.1%, nearly matching the efficiency of conventional silicon-based solar cells. Among PSCs, all-inorganic CsPbBr3 PSCs have emerged as a subject of keen interest owing to their exceptional stability in thermal and humid conditions, in contrast to organic-inorganic PSCs that utilize MAPbBr(3) as light-harvesting materials, which have a limited lifespan due to the instability of organic ammonium cations in the composition. The fabrication of all-inorganic CsPbBr3 PSCs typically involves a two-step spin-coating method, in which the PbBr2 layer is initially deposited on fluorine-doped tin oxide conductive glass with an electron or hole transport layer. Subsequently, the CsBr solution is spin-coated onto the PbBr2 layer and annealed to form the CsPbBr3 layer. Unlike methanol, the CsBr is dissolved in water at a high concentration to ensure complete reaction with PbBr2 without causing environmental pollution issues. However, the suboptimal contact between water and PbBr2 films poses a challenge to the development of PSCs and may result in the generation of more defects and excess CsBr. Consequently, an additive is required for the CsBr aqueous solution to enhance the quality of the perovskite film produced through the two-step spincoating method, facilitating the uniform spread of the solution on the PbBr2 film and promoting evaporation to achieve larger CsPbBr3 grains while inhibiting defects. Consequently, water is utilized to dissolve the CsBr at a high concentration, while employing various volume fractions of additives, reaction times, and annealing durations. It is observed that the utilization of a 1.175 mol L-1 CsBr aqueous solution with a 5% volume fraction of n-butanol (NBA) on the PbBr2 film, a reaction period of 15 s prior to spin-coating, and an annealing duration of 15 min at 250 degrees C, yields a better morphology and photovoltaic performance compared to the pristine one, solely comprising CsBr aqueous solution. The principal findings and discussions are outlined below: (1) The NBA-doped CsPbBr3 film exhibits fewer defects and heterophase compared to the pristine film in morphology, as evidenced by scanning electron microscope (SEM) and X-ray diffraction (XRD) measurements. This indicates that the introduction of a 5% volume of NBA enhances the wettability of the CsBr aqueous solution, facilitating improved contact with the PbBr2 film, and offering additional nucleation sites due to the boiling point difference between water and NBA. (2) In the electrochemical and optical tests, the NBA-doped group exhibits a notable decrease in defect density, effectively mitigating nonradiative charge-carrier recombination. This enhancement is conducive to improving the extraction and mobility of photogenerated carriers, consequently enhancing both the VOC and PCE of the PSCs. The moderate incorporation of NBA improves the growth of CsPbBr3 grains and facilitates the reaction between PbBr2 and CsBr, thereby ameliorating the defects within the perovskite film. This process leads to the development of larger grains, thereby promoting radiative charge-carrier combination and culminating in superior PSC performance. (3) The PSCs with the configuration of FTO/TiO2/CsPbBr3/Carbon are fabricated. The NBA-doped PSC can achieve an optimal PCE of 9.92% accompanied by a VOC of 1.60 V, FF of 85.78%, and JSC of 7.23 mA cm(-2), which is a significant improvement compared to that of the undoped-device (6.80%). Moreover, the stability of these devices has markedly increased, as evidenced by the fact that after 28 days, the PCE of the optimum device remains above 95%.