Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Control of electron-spin polarization via δ-potential in 3-layered semiconductor heterostructure modulated by Rashba spin-orbit coupling

Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-layered semiconductor heterostructure

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Structurally Manipulating Electron-Spin Polarization Via Δ-Doping in a Magnetic Nanostructure

Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Electron-Spin Filter Based on Dresselhaus Spin-Orbit-Coupling Modulated Single-Layered Semiconductor Nanostructure

Electron-spin filter based on Dresselhaus spin-orbit-coupling modulated double-layered semiconductor microstructure

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Spin Transport Through QD with Spin–orbital Interaction and Magnetic Field

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Spin Filtering Implemented Through Rashba Spin-Orbit Coupling and Weak Magnetic Modulations

Tunable spin-polarized source by the δ-doping in anisomerous double δ- magnetic- barrier nanostructure

Orbital mapping of energy bands and the truncated spin polarization in three-dimensional Rashba semiconductors

Spin polarization control in a 2-dimensional semiconductor

Bias-Controllable Intrinsic Spin Polarization In A Quantum Dot: Proposed Scheme Based On Spin-Orbit Interaction

Structurally-controllable electron-momentum filter based on hybrid ferromagnet, Schottky-metal and semiconductor nanostructure

Tunable spin-polarized source by the in anisomerous double nanostructure

Ferroelectric gate control of Rashba–Dresselhaus spin–orbit coupling in ferromagnetic semiconductor (Zn, Co)O

Transport of Spin-Polarized Electrons in a Magnetic Superlattice

The δ-doping manipulable temporal spin splitter for electron in semiconductor magnetic quantum microstructure

Electric control of spin injection into a ferroelectric semiconductor