Abstract:In recent years, terahertz communication has attracted extensive attentions due to its large bandwidth for supporting terabit-per-second capacity. Along with the rapid evolution of terahertz optoelectronic devices, remarkable achievements have been witnessed in developing photonic terahertz communication systems with large capacities. In fact, photonics-assisted terahertz communication systems have exhibited some advantages, for instance, bridging a seamless connection between the existing optical fiber network and wireless network, offering flexible carrier switching over a wide radio frequency range, as well as supporting easy implementation of high-order complex modulation formats and multicarrier multiplexing terahertz channels. However, due to high atmospheric propagation loss, limited terahertz component bandwidth and low terahertz emission power, achieving simultaneous transmission of single-lane data rates beyond 200 Gbps is still challenging based on a single pair of terahertz transceivers. In this work, by employing subcarrier (SC) multiplexing, high-order 64-ary quadrature amplitude modulation (64-QAM) format, well-defined digital signal processing (DSP) and wideband terahertz transceivers, a multicarrier terahertz photonic-wireless communication link operating in the 300 GHz band is proposed and experimentally demonstrated. At the transmitter side, a baseband pseudo-random binary sequence (PRBS-15) signal with a baud rate of 12 Gbaud is generated from an arbitrary waveform generator (AWG), and then modulated onto an optical carrier centered at 193.414 THz. The modulated optical signal is combined with three optical carriers centered at 193.7035 THz, 193.7165 THz, and 193.7295 THz, for multi-carrier THz generation at a uni-traveling carrier photodiode (UTC-PD) featuring large bandwidth (100 GHz), which consists of three SCs centered at 286.5 GHz, 299.5 GHz and 312.5 GHz, respectively. At the receiver side, we employ a Schottky diode mixer with high sensitivity to down-convert the three terahertz SCs into the intermediate frequency (IF) domain, with three IF signals cantered at 6.5 GHz, 19.5 GHz, and 32.5 GHz, respectively, which are then processed using home-made advanced DSP routine, including a linear adaptive equalizer, compensation algorithms of frequency offset and phase noise. In the experiment, a total line data rate of 216 Gbps (72 Gbps/SC × 3 SC) over a wireless distance of 30 m is successfully transmitted, and the performance of all three SCs can reach below the hard decision forward-error-correction (HD-FEC) with 6.25 % overhead, reaching an aggregated net transmission capacity of up to 202.5 Gbps. This achievement of single-lane simultaneous transmission of beyond 200 Gbps using a single pair of 300 GHz transceivers is considered a significant step towards next-generation wireless communications.

A 50-Gb/s Multicarrier Transmitter Using DAC-Based Polar Drivers in 22-nm FinFET

30 M 64-QAM Multicarrier Photonic-Wireless Communication Link in the 300 GHz Band

Single-lane 200 Gbit/s Photonic Wireless Transmission of Multicarrier 64-QAM Signals at 300 GHz over 30 M

D-band CMOS Transmitter and Receiver for Multi-Giga-bit/sec Wireless Data Link

An 11.05 Mw/Gbps Quad-Channel 1.25-10.3125 Gbps Serial Transceiver With A 2-Tap Adaptive Dfe And A 3-Tap Transmit Ffe In 40 Nm Cmos

An Output Bandwidth Optimized 200-Gb/s PAM-4 100-Gb/s NRZ Transmitter With 5-Tap FFE in 28-nm CMOS

A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

A 70 Mw 25 Gb/s Quarter-Rate SerDes Transmitter and Receiver Chipset with 40 Db of Equalization in 65 Nm CMOS Technology

A 40-Gb/s Quarter-Rate SerDes Transmitter and Receiver Chipset in 65-Nm CMOS

A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver with 1/4 rate reconfigurable 4-tap FFE and half-rate slicer in a 28-nm CMOS

An Energy-Efficient 10-Gb/s CMOS Millimeter-Wave Transceiver with Direct-Modulation Digital Transmitter and I/Q Phase-Coupled Frequency Synthesizer

A 116-Gb/s PAM4 0.9-pJ/b Transmitter With Eight-Tap FFE in 5-nm FinFET

A Fully-Integrated Wideband Digital Polar Transmitter with 11-Bit Digital-to-Phase Converter in 40nm CMOS.

A 4.8-Mw/gb/s 9.6-Gb/s 5 &Lt;inline-Formula> &Lt;tex-Math Notation="tex">$+$</tex-Math></inline-formula> 1-Lane Source-Synchronous Transmitter in 65-Nm Bulk CMOS

6.7 A 128gb/s PAM-4 Transmitter with Programmable-Width Pulse Generator and Pattern-Dependent Pre-Emphasis in 28nm CMOS

A 5-50 Gb/s Quarter Rate Transmitter with a 4-Tap Multiple-Mux Based FFE in 65 Nm CMOS

A 50gb/s Low Power PAM4 SerDes Transmitter with 4-Tap FFE and High Linearity Output Voltage in 65nm CMOS Technology

A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS

A 80 mW 40 Gb/s Transmitter With Automatic Serializing Time Window Search and 2-tap Pre-Emphasis in 65 nm CMOS Technology

A Wireline Transceiver With 3-bit per Symbol Using Common-Mode NRZ and Differential-Mode PAM-4 Signaling Techniques

A Power Efficient 1.0625-3.125 Gb/s Serial Transceiver in 130 Nm Digital CMOS for Multi-Standard Applications.