Constructing abundant interface by decorating MoP quantum dots on CoP nanowires to induce electronic structure modulation for enhanced hydrogen evolution reaction

Yuanyuan Chen,Tingting Sui,Chaojie Lyu,Kaili Wu,Jiwen Wu,Meifang Huang,Ju Hao,Woon-Ming Lau,Chubin Wan,Dawei Pang,Jinlong Zheng
DOI: https://doi.org/10.1039/d3mh00644a
IF: 13.3
2023-06-17
Materials Horizons
Abstract:Interface engineering is a method of enhancing catalytic activity while maintaining material surface properties. Thus, we explored on interface effect mechanism via a multistage structure MoP/CoP/Cu3P/CF. Remarkably, the multilevel structure demonstrates outstanding overpotential of 64.6 mV at 10 mA/cm2 with a Tafel slope of 68.2 mV/dec in 1 M KOH. DFT calculations indicate that the MoP/CoP interface in the catalyst exhibited the most favorable H* adsorption characteristics (-0.08 eV) compared to the pure phases of CoP (0.55 eV) and MoP (0.22 eV). This result can be attributed to the apparent modulation of electronic structures within the interface domains. Additionally, the multistage CoCH/Cu(OH)2/CF ||MoP/CoP/Cu3P/CF electrolyzer demonstrates excellent over water splitting performance, achieving at 10 mA/cm2 in 1 M KOH solution with a modest voltage of only 1.53 V. This electronic structures adjustment via interface effects provides a new and efficient approach to prepare high-performance hydrogen production catalysts
materials science, multidisciplinary,chemistry
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