Abstract:In this paper, the structural geometry, electronic and magnetic properties of single magnesium (Mg) and vanadium (V) atoms doped 4H-SiC system were investigated. For the structural geometry of each sample, the energy substitution, as well as bond length, were calculated; results obtained indicate that the bond length of Silicon-Magnesium (Si-Mg) and SiliconVanadium (Si-V) was 1.90 Å and 2.02 Å respectively, greater than that of silicon-carbon (SiC) 1.89 Å in pure SiC. This result indicates that the bond length increases due to the introduction of dopants with greater radii than that of Si. It also shows that both Mg and V doping change the structure from non-magnetic ordering to magnetic in nature. The band structure result for both undoped and doped shows the presence of valence band maximum (VBM) and conduction band minimum (CBM) around different symmetry points which indicate an indirect band gap nature. The calculated band gap of pure 4H SiC is found to be ~2.21 eV, which is at a wide band gap material range, but with the introduction of Mg and V dopants, the band gap reduced significantly to ~0.4 eV and ~0.45 eV respectively. The density of state (DOS) and projected density of state (PDOS) show the contributions of the various states in both the VBM and CBM; after doping the Fermi energy is shifted towards higher energy and enters into the conduction band, exhibiting spin polarization. Both DOS and PDOS indicated that the magnetic moments mainly come from the 2p orbitals of Si atoms and 3p for Mg dopant and 3d orbitals for V dopant. The magnetic moment for 4H-SiC/Mg and 4H-SiC/V was calculated to be 2.23 μB and 3.24 μB.

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Higher-magnesium-doping effects on the singlet ground state of the Shastry-Sutherland SrCu2(BO3)2

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Plaquette Singlet Transition, Magnetic Barocaloric Effect, and Spin Supersolidity in the Shastry-Sutherland Model

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Different doping from apical and planar oxygen vacancies in Ba$_{2}$CuO$_{4-δ}$ and La$_{2}$CuO$_{4-δ}$

Cu NMR study of lightly doped La$_{2-x}$Sr$_{x}$CuO$_4$

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Effects of Co and Mn doping on the structure and superconductivity of MgB2

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X-Ray Diffraction Studies on La1.85sr0.15cuo4 Doped with Mg in High Doping Level

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Unconventional Superconducting States on Doped Shastry-Sutherland Lattice

Effect of Single Atom Doping on Structural, Electronic and Magnetic Properties of Hexagonal Silicon Carbide (4H-SiC) for Spintronic Application: A first principle study