Epitaxial Growth of Large‐Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget
Xiaoqian Zhang,Yue Li,Qiangsheng Lu,Xueqiang Xiang,Xiaozhen Sun,Chunli Tang,Muntasir Mahdi,Clayton Conner,Jacob Cook,Yuzan Xiong,Jerad Inman,Wencan Jin,Chang Liu,PeiYu Cai,Elton J. G. Santos,Charudatta Phatak,Wei Zhang,Nan Gao,Wei Niu,Guang Bian,Peng Li,Dapeng Yu,Shibing Long
DOI: https://doi.org/10.1002/adma.202311591
IF: 29.4
2024-03-03
Advanced Materials
Abstract:A seeded growth technique is developed for crystallizing large‐scale 2D CrTe2 films on amorphous SiNx/Si substrates with a low thermal budget. Grain boundaries, intrinsic ferromagnetism, and magnetic–electrical behavior of 2D CrTe2 magnets are controlled through crystallinity engineering. This work paves the way for large‐scale batch manufacturing of practical magneto–electronic and spintronic devices, heralding a new era of technological innovation. 2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal‐oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large‐scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo‐oersted, attributed to weak intergranular exchange coupling. Field‐driven Néel‐type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single‐crystalline counterparts. Current‐assisted magnetization switching, enabled by a substantial spin–orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 107 ħ/2e Ω−1 m−1), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large‐scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology