Abstract:Electroluminescence is the phenomenon by which a material emits light in response to the passage of an electric current. In solids, it is the prerogative of semiconductors and related organic materials, and it results from the radiative recombination of electrons and holes. Today, electroluminescent devices represent the majority of lighting and display devices and are a building block of the global information and telecommunication network. We report on two observations signaling the electroluminescence of high-mobility graphene field-effect transistors (FET). The semi-metallic nature of graphene a priori forbids electroluminescence: Indeed, in semiconductors, the bandgap energetically insulates the electrons from the holes. Such protection doesn’t exist in graphene which is gapless. Nonetheless, electroluminescence is possible, because (i) of the remarkable inefficiency of the non-radiative carrier relaxation in graphene, and (ii) thanks to an original carrier injection mechanism specific to 2D semimetals: the Zener-Klein (ZK) tunnel conductance. [1] Our first observation consists in the thermometry of graphene’s electrons with applied bias, see figure 1a. Using electronic noise thermometry, we observe that, after an initial warm up with the deposited Joule power, the electron gas cools down, starting at a doping-dependent threshold. The turning point is concomitant with the onset of electron-hole injection by Zener-Klein (ZK) tunneling. The cooling mechanism involves the radiative emission, due to the electron-hole recombination, in electromagnetic near-field modes of the hBN-graphene heterostructure. It is reminiscent of far-field electroluminescent cooling that can be observed in regular LEDs [2] except that it’s much more efficient (~10 mW vs. ~10 pW, i.e., 9 orders of magnitude larger). [3] Our second observation consists in the detection of the middle-wave infrared radiation (MIR) emitted by a high-mobility graphene FET operating in ambient conditions, see figure 1b. We observe a sizeable optical emission in the range 80–250 meV, starting at the ZK tunneling threshold bias. The spectral analysis of the emitted light indicates that it originates from the scattering of the hBN-graphene heterostructure near-fields, as observed in reference [4] by surface near-field optical microscopy. Bibliography [1] W. Yang et al, A graphene Zener-Klein transistor cooled by a hyperbolic substrate . Nat. Nanotechnol. 2018, Vol. 47, 13. [2] P. Santhanam et al , Room temperature thermo-electric pumping in mid-infrared light-emitting diodes . Appl. Phys. Lett. 2013, Vol. 103, 18, p. 183513. [3] E. Baudin et al, Hyperbolic Phonon Polariton Electroluminescence as an Electronic Cooling Pathway . Adv. Funct.. Mater. 2020, Vol. 30, 8, p. 1904783. [4] S. Dai et al, « Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial ». Nat. Nanotech. 2015, Vol. 10, 8, p. 682. Figure 1

Filtering the photoluminescence spectra of atomically thin semiconductors with graphene

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Engineering 2D material exciton lineshape with graphene/h-BN encapsulation

Manipulating single photon emitter radiative lifetime in transition-metal dichalcogenides through Forster resonance energy transfer to graphene

Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy

Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure

Electroluminescence of the graphene 2D semi-metal

Engineering 2D Material Exciton Line Shape with Graphene/ h -BN Encapsulation

Enhancing functionalities of atomically thin semiconductors with plasmonic nanostructures

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

High-Throughput Identification and Statistical Analysis of Atomically Thin Semiconductors

Photoluminescence manipulation in two-dimensional transition metal dichalcogenides

Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

(Invited) The Electroluminescence of Graphene

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Resonant Visible Light Modulation with Graphene

Direct Band Gap in Multilayer Transition Metal Dichalcogenide Nanoscrolls with Enhanced Photoluminescence

Polarized and narrow excitonic emission from graphene-capped monolayer WS$_2$ through resonant phonon relaxation

A Bifunctional Optoelectronic Device for Photodetection and Photoluminescence Switching Based on Graphene/ZnTe/Graphene Van Der Waals Heterostructures.

Direct Optical-Structure Correlation in Atomically Thin Dichalcogenides and Heterostructures