S-scheme SnO/TiO 2 heterojunction with high hole mobility for boosting photocatalytic degradation of gaseous benzene

Shuo Yang,Qipeng Lu,Faguo Wang,Yuanhong Zhi,Jingyue Chen,Yihan Wang,Han Zhang,Haiqing Yin,Peng Sun,Wenbin Cao
DOI: https://doi.org/10.1016/j.cej.2023.147345
IF: 15.1
2023-11-20
Chemical Engineering Journal
Abstract:Enhancing the efficiency of carrier migration and separation plays a pivotal role in promoting photocatalytic performance. Constructing S-scheme heterojunction is a promising strategy to achieve this desired objective. Here, we rationally designed and preciously synthesized SnO{0 0 1}/TiO 2 {0 0 1} S-scheme heterojunction with exceptionally high hole mobility (1122 cm 2 /(V·s)), which ranks among the best of reported works. SnO{0 0 1}/TiO 2 {0 0 1} heterojunctions exhibited outstanding performance of gaseous benzene degrading. The degradation rate constant of SnO/TiO 2 heterojunction is 2.4675 h −1 , and is boosted by 5.3 times compared with TiO 2 (0.4595 h −1 ). Through the combination of theoretical calculation and experiment, S-scheme mode of carrier transferring was verified. The promoted hole mobility in SnO/TiO 2 heterojunction enhances the production of ·OH, further boosting photocatalytic performance. By analyzing the detected intermediates, we proposed degradation pathways for benzene, which provide a profound and elucidating view of complex processes in benzene photocatalytic degradation.
engineering, chemical, environmental
What problem does this paper attempt to address?