Visible-light absorption of indium oxide thin films via Bi 3+ doping for visible-light-responsive photocatalysis

Yoko Taniguchi,Hiroyuki Nishinaka,Kazuki Shimazoe,Toshiyuki Kawaharamura,Kazutaka Kanegae,Masahiro Yoshimoto
DOI: https://doi.org/10.1016/j.matchemphys.2024.128961
IF: 4.778
2024-01-28
Materials Chemistry and Physics
Abstract:In 2 O 3 is commonly used as a photocatalyst for hydrogen energy storage. However, it has the disadvantage of a large optical bandgap (3.7 eV), resulting in low absorption of visible light, which corresponds to 50 % of sunlight energy. Band engineering is an efficient method to add visible-light responsivity to wide-bandgap In 2 O 3 . In this study, the band engineering of In 2 O 3 was performed by incorporating bismuth to obtain an intermediate band that could absorb visible light. Thin films of In 2 O 3 doped with bismuth (IBO) were grown using mist chemical vapor deposition (CVD), and their optical properties were investigated. Transmittance measurements showed that the IBO thin film exhibited absorption in the visible light region of 400–700 nm, indicating that the introduction of bismuth created an intermediate band in the bandgap of In 2 O 3 . IBO thin films with platinum as a co-catalyst could almost completely degrade methylene blue under visible light (420 nm) irradiation for 72 h. Thus, the incorporation of bismuth into In 2 O 3 via mist CVD and the strong absorption of visible light owing to its intermediate band were demonstrated. This study demonstrates that IBO thin films with large absorption in the visible-light region are promising materials for visible-light-responsive photocatalysts.
materials science, multidisciplinary
What problem does this paper attempt to address?