The influence of impurity silicon on the adsorption of beryllium cluster toward carbon monoxide molecule

Li Lin,Xiang Jun Kuang
DOI: https://doi.org/10.1140/epjp/s13360-024-05740-9
2024-10-25
The European Physical Journal Plus
Abstract:The Be n SiCO ( n = 1 ~ 12) clusters were calculated by the density functional theory and generalized gradient approximation method at the Perdew–Wang 91 level. The results demonstrate that in the Be n +1 and Be n Si clusters, the carbon monoxide molecule is attached to the surface of the cluster in parallel and occupies the outer position. The impurity silicon atom has a significant influence on the Be n +1 CO clusters and the structure of the Be n SiCO cluster. After that, the average Be–Be bonds and the C-O bond become longer or even break. The average binding energy and adsorption energy of Be n SiCO clusters are remarkably raised compared with Be n +1 CO clusters, which implies that the silicon atom enhances the interaction between beryllium clusters and the CO molecule. The results of arrangement analysis, frontier orbit, and state density reveal that the charge transfer and orbital hybridization of the Be n SiCO cluster are higher than those of the Be n +1 CO cluster, which leads to the deformation of cluster structure and breaks the C-O bond. Our results illustrate that doping a silicon atom enhances the interaction of beryllium clusters with the CO molecule.
physics, multidisciplinary
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