Abstract:Because of the strong Coulomb interaction and quantum confinement effect, 2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications, such as excitonic circuits, switches, and transistors, it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore, the strong quantum confinement in 2-dimensional space introduces exotic properties, such as enhanced phonon bottlenecking effect, many-body interaction of excitons, and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work, we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2, MoWSe2, and MoSe2, with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time, followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2, the energetic carrier-induced exciton expansion is much more effective, with diffusivity up to 668 and 2295 cm2 s−1, respectively. However, the “cold” exciton transport is trap limited in MoWSe2 and MoSe2, leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.

Ultrafast exciton fluid flow in an atomically thin MoS 2 semiconductor

Ultrafast Exciton Fluid Flow in an Atomically Thin MoS2 Semiconductor

Exciton Condensation in an Atomically-thin MoS2 Semiconductor

Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films

Ultrafast dynamics of charge transfer in CVD grown MoS2-graphene heterostructure

Ultrafast Non-Radiative Dynamics of Atomically Thin MoSe2

Ultrafast Terahertz Probe of Transient Evolution of Charged and Neutral Phase of Photoexcited Electron-hole Gas in Monolayer Semiconductor

Remote Lightening and Ultrafast Transition: Intrinsic Modulation of Exciton Spatiotemporal Dynamics in Monolayer MoS2.

Ultrafast exciton transport in van der Waals heterostructures

Ultrafast Carrier Thermalization and Cooling Dynamics in Few-Layer MoS2.

Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction

Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Emergence and relaxation of an e-h quantum liquid phase in photoexcited MoS2 nanoparticles at room temperature

Exciton-Phonon Coupling Induces a New Pathway for Ultrafast Intralayer-to-Interlayer Exciton Transition and Interlayer Charge Transfer in WS 2 -MoS 2 Heterostructure: A First-Principles Study

Indirect exciton-phonon dynamics in MoS2 revealed by ultrafast electron diffraction

Room-Temperature Electron-Hole Liquid in Monolayer MoS2

Perfect Coulomb drag and exciton transport in an excitonic insulator

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a Heterostructure